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U1GWJ2C49 даташитФункция этой детали – «Toshiba Schottky Barrier Rectifier Schottky Barrier Type». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
U1GWJ2C49 | Toshiba Semiconductor |
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE U1GWJ2C49
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
U1GWJ2C49
SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
l Average Output Rectified Current l Repetitive Peak Reverse Voltage : IO = 1A : VRRM = 40V Unit: mm
l Low Switching Losses and Output Noise.
POLARITY
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Reverse Voltage Average Output Rectified Current Peak One Cycle Surge Forward Current (Sine Wave) Junction Temperature Storage Temperature Range SYMBOL VRRM IO I |
Это результат поиска, начинающийся с "1GWJ2C49", "U1GWJ2" |
Номер в каталоге | Производители | Описание | |
2SA1249 | Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:ENN1060C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1249/2SC3117
160V/1.5A Switching Applications
Uses
· Color TV sound output, converters, inverters.
Features
· High breakdown voltage. · Large current capacity. · Adoption of MBIT process.
Package Dime |
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2SA1249 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1249
DESCRIPTION ·With TO-126 package ·Complement to type 2SC3117 ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output,converters, Inverte |
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2SA1249 | Inchange Semiconductor |
POWER TRANSISTOR Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1249
DESCRIPTION ·With TO-126 package ·Complement to type 2SC3117 ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output,converters, Inverters applications
PINN |
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2SA1249 | New Jersey Semiconductor |
Trans GP BJT PNP 160V 1.5A 3-Pin TO-126 |
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2SD1249 | Panasonic Semiconductor |
Silicon NPN triple diffusion planar type(For low-freauency power amplification) Power Transistors
2SD1249, 2SD1249A
Silicon NPN triple diffusion planar type
For low-freauency power amplification
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
s Features
q q
10.5min.
High collector to base voltage VCBO N type package enabling direct sol |
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2SD1249 | Kexin |
Silicon NPN Triple Diffusion Planar Type SMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type 2SD1249, 2SD1249A
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
+0.2 9.70 -0.2 +0.15 0.50 -0.15
+0.1 0.80-0.1
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0. |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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