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TUSB8020B-Q1 даташит

Функция этой детали – «Tusb8020b-q1 Automotive Two-port Usb 3.0 Hub».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
TUSB8020B-Q1 Texas Instruments
Texas Instruments
  TUSB8020B-Q1 Automotive Two-Port USB 3.0 Hub

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Это результат поиска, начинающийся с "8020B", "TUSB8020B"

Номер в каталоге Производители Описание PDF
APT8020B2FLL Advanced Power Technology
Advanced Power Technology

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

APT8020B2FLL APT8020LFLL 800V 38A 0.200W POWER MOS 7TM FREDFET B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
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APT8020B2LL Advanced Power Technology
Advanced Power Technology

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

800V 38A 0.200W APT8020B2LL APT8020LLL B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power
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BS616UV8020BC Brilliance Semiconductor
Brilliance Semiconductor

Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable „ DESCRIPTION BS616UV8020 • Ultra low operation voltage : 1.8 ~3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade : 20mA (Max.) operating curre
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BS616UV8020BI Brilliance Semiconductor
Brilliance Semiconductor

Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable „ DESCRIPTION BS616UV8020 • Ultra low operation voltage : 1.8 ~3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade : 20mA (Max.) operating curre
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HY57V658020B Hynix Semiconductor
Hynix Semiconductor

4 Banks x 2M x 8Bit Synchronous DRAM

HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x
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HY57V658020BLTC-10 Hynix Semiconductor
Hynix Semiconductor

4 Banks x 2M x 8Bit Synchronous DRAM

HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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