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TUSB8020B-Q1 даташитФункция этой детали – «Tusb8020b-q1 Automotive Two-port Usb 3.0 Hub». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
TUSB8020B-Q1 | Texas Instruments |
TUSB8020B-Q1 Automotive Two-Port USB 3.0 Hub |
Это результат поиска, начинающийся с "8020B", "TUSB8020B" |
Номер в каталоге | Производители | Описание | |
APT8020B2FLL | Advanced Power Technology |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT8020B2FLL APT8020LFLL
800V 38A 0.200W
POWER MOS 7TM
FREDFET
B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) |
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APT8020B2LL | Advanced Power Technology |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. 800V 38A 0.200W
APT8020B2LL APT8020LLL
B2LL
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power |
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BS616UV8020BC | Brilliance Semiconductor |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
DESCRIPTION
BS616UV8020
• Ultra low operation voltage : 1.8 ~3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade : 20mA (Max.) operating curre |
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BS616UV8020BI | Brilliance Semiconductor |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
DESCRIPTION
BS616UV8020
• Ultra low operation voltage : 1.8 ~3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade : 20mA (Max.) operating curre |
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HY57V658020B | Hynix Semiconductor |
4 Banks x 2M x 8Bit Synchronous DRAM HY57V658020B
4 Banks x 2M x 8Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x |
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HY57V658020BLTC-10 | Hynix Semiconductor |
4 Banks x 2M x 8Bit Synchronous DRAM HY57V658020B
4 Banks x 2M x 8Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V658020B is organized as 4banks of 2,097,152x |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |