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TP3N120 даташитФункция этой детали – « ICtp3n120». |
Показать результаты поиска |
| Номер в каталоге | Производители | Описание | |
| TP3N120 |  IXYS Corporation |
ICTP3N120
High Voltage Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
IXTA 3N120 IXTP 3N120
VDSS 1200 V
ID25 3A
RDS(on) 4.5 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 1200 1200 |
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Это результат поиска, начинающийся с "3N120", "TP3N" |
| Номер в каталоге | Производители | Описание | |
| IGB03N120H2 |  Infineon Technologies |
HighSpeed 2-Technology IGP03N120H2, IGW03N120H2
HighSpeed 2-Technology
• Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable |
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| IGP03N120H2 | Infineon Technologies |
IGBT IGP03N120H2 IGW03N120H2
HighSpeed 2-Technology
• Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- tempera |
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| IGW03N120H2 | Infineon Technologies |
IGBT IGP03N120H2 IGW03N120H2
HighSpeed 2-Technology
• Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- tempera |
|
| IKA03N120H2 |  Infineon |
IGBT IKA03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
• • Designed for: - TV – Horizontal Line Deflection 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavi |
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| IKB03N120H2 | Infineon Technologies |
HighSpeed 2-Technology IKP03N120H2, IKW03N120H2
IKB03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
• Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in r |
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| IKP03N120H2 | Infineon Technologies |
HighSpeed 2-Technology IKP03N120H2, IKW03N120H2
IKB03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
• Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in r |
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Последние обновления
| Номер в каталоге | Производители | Описание | |
| 2N3904 |  Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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| NE555 |  ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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| DataSheet26.com | 2020 | Контакты |