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TP3N120 даташит

Функция этой детали – « ICtp3n120».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
TP3N120 IXYS Corporation
IXYS Corporation
   ICTP3N120

High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXTA 3N120 IXTP 3N120 VDSS 1200 V ID25 3A RDS(on) 4.5 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1200 1200
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Это результат поиска, начинающийся с "3N120", "TP3N"

Номер в каталоге Производители Описание PDF
IGB03N120H2 Infineon Technologies
Infineon Technologies

HighSpeed 2-Technology

IGP03N120H2, IGW03N120H2 HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable
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IGP03N120H2 Infineon Technologies
Infineon Technologies

IGBT

IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - tempera
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IGW03N120H2 Infineon Technologies
Infineon Technologies

IGBT

IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - tempera
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IKA03N120H2 Infineon
Infineon

IGBT

IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • • Designed for: - TV – Horizontal Line Deflection 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavi
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IKB03N120H2 Infineon Technologies
Infineon Technologies

HighSpeed 2-Technology

IKP03N120H2, IKW03N120H2 IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in r
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IKP03N120H2 Infineon Technologies
Infineon Technologies

HighSpeed 2-Technology

IKP03N120H2, IKW03N120H2 IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in r
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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