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TMBR6S08 даташитФункция этой детали – «Voltage 600v 0.8amp SilICon Bridge Rectifiers». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
TMBR6S08 | SeCoS Halbleitertechnologie |
Voltage 600V 0.8Amp Silicon Bridge Rectifiers TMBR6S08
Elektronische Bauelemente Voltage 600V 0.8 Amp Silicon Bridge Rectifiers
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Ultra Low leakage current IR<2µA,TA=125°C No solder used,Real fully in line with lead free Package Thickness is 1.2mm High ESD >12KV(HBM MODEL) Plastic material has U/L flammability classification 94V-0 High temperature soldering guaranteed: 260°C/10s(Reflow) 350°C/3s(Manual welding)
TMB
MECHANICAL DATA
Small signal rectifier device |
Это результат поиска, начинающийся с "6S08", "TMBR6" |
Номер в каталоге | Производители | Описание | |
AT706S08 | Power Semiconductors |
PHASE CONTROL THYRISTOR ANSALDO
Ansaldo Trasporti s.p.a. Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
AT706
Repetitive voltage up to Mean on-state current Surge curr |
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M366S0823CT0 | Samsung Semiconductor |
SDRAM DIMM M366S0823CT0
M366S0823CT0 SDRAM DIMM
PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S0823CT0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823 |
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M366S0823CTF | Samsung Semiconductor |
SDRAM DIMM M366S0823CTF
M366S0823CTF SDRAM DIMM
PC66 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S0823CTF is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823C |
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M366S0823CTL | Samsung Semiconductor |
SDRAM DIMM M366S0823CTL
M366S0823CTL SDRAM DIMM
PC66 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S0823CTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823C |
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M366S0823CTS | Samsung Semiconductor |
SDRAM DIMM M366S0823CTS
M366S0823CTS SDRAM DIMM
PC100 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S0823CTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823 |
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M366S0823DTF | Samsung Semiconductor |
SDRAM DIMM M366S0823DTF
M366S0823DTF SDRAM DIMM
PC66 Unbuffered DIMM
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION
The Samsung M366S0823DTF is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823D |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |