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TMBR6S08 даташит

Функция этой детали – «Voltage 600v 0.8amp SilICon Bridge Rectifiers».



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Номер в каталоге Производители Описание PDF
TMBR6S08 SeCoS Halbleitertechnologie
SeCoS Halbleitertechnologie
  Voltage 600V 0.8Amp Silicon Bridge Rectifiers

TMBR6S08 Elektronische Bauelemente Voltage 600V 0.8 Amp Silicon Bridge Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Ultra Low leakage current IR<2µA,TA=125°C No solder used,Real fully in line with lead free Package Thickness is 1.2mm High ESD >12KV(HBM MODEL) Plastic material has U/L flammability classification 94V-0 High temperature soldering guaranteed: 260°C/10s(Reflow) 350°C/3s(Manual welding) TMB MECHANICAL DATA Small signal rectifier device
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Это результат поиска, начинающийся с "6S08", "TMBR6"

Номер в каталоге Производители Описание PDF
AT706S08 Power Semiconductors
Power Semiconductors

PHASE CONTROL THYRISTOR

ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - PHASE CONTROL THYRISTOR AT706 Repetitive voltage up to Mean on-state current Surge curr
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M366S0823CT0 Samsung Semiconductor
Samsung Semiconductor

SDRAM DIMM

M366S0823CT0 M366S0823CT0 SDRAM DIMM PC100 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S0823CT0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823
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M366S0823CTF Samsung Semiconductor
Samsung Semiconductor

SDRAM DIMM

M366S0823CTF M366S0823CTF SDRAM DIMM PC66 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S0823CTF is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823C
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M366S0823CTL Samsung Semiconductor
Samsung Semiconductor

SDRAM DIMM

M366S0823CTL M366S0823CTL SDRAM DIMM PC66 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S0823CTL is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823C
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M366S0823CTS Samsung Semiconductor
Samsung Semiconductor

SDRAM DIMM

M366S0823CTS M366S0823CTS SDRAM DIMM PC100 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S0823CTS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823
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M366S0823DTF Samsung Semiconductor
Samsung Semiconductor

SDRAM DIMM

M366S0823DTF M366S0823DTF SDRAM DIMM PC66 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S0823DTF is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823D
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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