TM2314 даташит

SHENZHEN TITAN M ICRO ELECTRONI CS CO., LTD. — — — — — — — — — — — — — — VDD AGND TREB_L TREB_R RIN ROUT LOUD_R RIN4 RIN3 RIN2 RIN1 LOUD_L LIN4 LIN3 1 2 3 4 5 TM2314 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 REF CLK DATA DGND OUT_L OUT_R BOUT_R BIN_R BOUT_L BIN_L LOUT LIN LIN1 LIN2 SHENZHEN TITAN M ICRO ELECTRONI CS CO., LTD. SHENZHEN TITAN M ICRO ELECTRONI CS CO., LTD. VS IS SVR Rin Vcl Sin RI Ginmin Ginmax 1 2 3 2 7 17 6 60 35 2 80 2 -1 9 30 80 50 2.5 100 0 11.25 10 40

TECH MOS Technology. N-Channel High Density Trench MOSFET TM2314FN PRODUCT SUMMARY VDSS ID 5.4 20V 4.3 46 @ VGS = 2.5V RDS(on) (m-ohm) Max 30 @ VGS = 4.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. D SOT-23-3L D S G S G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation a a a