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TLIU04C1 даташитФункция этой детали – «Tliu04c1 Quad T1/e1 Line Interface». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
TLIU04C1 | Agere Systems |
TLIU04C1 Quad T1/E1 Line Interface Advance Data Sheet, Rev. 2 April 1999
TLIU04C1 Quad T1/E1 Line Interface
Features
s s
Transmitter includes transmit encoder (B8ZS or HDB3), pulse shaping, and line driver. Five pulse equalization settings for template compliance at DSX cross connect. Receive includes equalization, digital clock and data recovery (immune to false lock), and receive decoder (B8ZS or HDB3). CEPT/E1 interference immunity as required by G.703. Transmit jitter <0.02 UI. Receive generated jitter <0.05 UI. Jitter attenuator selectable for use |
Это результат поиска, начинающийся с "04C1", "TLIU0" |
Номер в каталоге | Производители | Описание | |
ED104C12-V0 | bf Display |
Color TFT-LCD ED104C12 V0
( ) Preliminary Specifications ( V ) Final Specifications Module Model Name 10.4 Inch Color TFT-LCD ED104C12 V0(G104SN02 V2)
Customer
Date
Approved by
Date
Michael Yeh
2012/07/16
Checked & Approved by
Prepared by
Note: This Specification is subject to change |
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HHM1904C1 | TDK |
Multilayer Balun Transformers Multilayer Balun Transformers
For 2.4GHz W-LAN/Bluetooth HHM Series
Type: HHM1904C1 (1.0×0.5×0.4mm max.) HHM1902A1 (1.0×0.5×0.5mm max.) HHM1902B1 (1.0×0.5×0.5mm max.) HHM1903A1 (1.0×0.5×0.5mm max.) HHM1904A1 (1.0×0.5×0.5mm max.) HHM1907B1 (1.0×0.5×0.5mm max.) HHM1908A |
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K64004C1D | Samsung semiconductor |
1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. K6R4004C1D
Document Title
1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY CMOS SRAM
Revision History
Rev No. Rev. 0.0 Rev. 0.1 History Initial release with Preliminary. Change Icc. Isb and Isb1 Item ICC(Comme |
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K6R1004C1C | Samsung semiconductor |
High-Speed CMOS Static RAM
PRELIMINARY PRELIMINARY
CMOS SRAM
K6R1004C1C-C/C-L, K6R1004C1C-I/C-P
Document Title
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
Revision History
Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to Final Data |
|
K6R1004C1D-JCI10 | Samsung semiconductor |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
for AT&T CMOS SRAM
K6R1008V1D
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 History Initial document. |
|
K6R1004C1D-JCI12 | Samsung semiconductor |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
for AT&T CMOS SRAM
K6R1008V1D
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 History Initial document. |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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