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TLIU04C1 даташит

Функция этой детали – «Tliu04c1 Quad T1/e1 Line Interface».



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Номер в каталоге Производители Описание PDF
TLIU04C1 Agere Systems
Agere Systems
  TLIU04C1 Quad T1/E1 Line Interface

Advance Data Sheet, Rev. 2 April 1999 TLIU04C1 Quad T1/E1 Line Interface Features s s Transmitter includes transmit encoder (B8ZS or HDB3), pulse shaping, and line driver. Five pulse equalization settings for template compliance at DSX cross connect. Receive includes equalization, digital clock and data recovery (immune to false lock), and receive decoder (B8ZS or HDB3). CEPT/E1 interference immunity as required by G.703. Transmit jitter <0.02 UI. Receive generated jitter <0.05 UI. Jitter attenuator selectable for use
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Это результат поиска, начинающийся с "04C1", "TLIU0"

Номер в каталоге Производители Описание PDF
ED104C12-V0 bf Display
bf Display

Color TFT-LCD

ED104C12 V0 ( ) Preliminary Specifications ( V ) Final Specifications Module Model Name 10.4 Inch Color TFT-LCD ED104C12 V0(G104SN02 V2) Customer Date Approved by Date Michael Yeh 2012/07/16 Checked & Approved by Prepared by Note: This Specification is subject to change
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HHM1904C1 TDK
TDK

Multilayer Balun Transformers

Multilayer Balun Transformers For 2.4GHz W-LAN/Bluetooth HHM Series Type: HHM1904C1 (1.0×0.5×0.4mm max.) HHM1902A1 (1.0×0.5×0.5mm max.) HHM1902B1 (1.0×0.5×0.5mm max.) HHM1903A1 (1.0×0.5×0.5mm max.) HHM1904A1 (1.0×0.5×0.5mm max.) HHM1907B1 (1.0×0.5×0.5mm max.) HHM1908A
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K64004C1D Samsung semiconductor
Samsung semiconductor

1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 0.1 History Initial release with Preliminary. Change Icc. Isb and Isb1 Item ICC(Comme
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K6R1004C1C Samsung semiconductor
Samsung semiconductor

High-Speed CMOS Static RAM

PRELIMINARY PRELIMINARY CMOS SRAM K6R1004C1C-C/C-L, K6R1004C1C-I/C-P Document Title 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to Final Data
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K6R1004C1D-JCI10 Samsung semiconductor
Samsung semiconductor

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 History Initial document.
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K6R1004C1D-JCI12 Samsung semiconductor
Samsung semiconductor

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 1.0 History Initial document.
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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