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TIP147T даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
10 TIP147T   SILICON PLANAR POWER DARLINGTON TRANSISTORS

Transys Electronics LIMITED SILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPN TIP147T PNP TO-220 Plastic Package For use in Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current (Repetitive) Base Current Power Dissipation @ Tc=25ºC Operating & Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj, Tstg Rth (j-c) VALUE 10
Transys
Transys
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9 TIP147T    Complementary power Darlington transistors

TIP142T TIP147T Complementary power Darlington transistors Features ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagrams R1 typ. =
STMicroelectronics
STMicroelectronics
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8 TIP147T   Monolithic Construction

TIP145T/146T/147T TIP145T/146T/147T ◎ SEMIHOW REV.A0,Oct 2007 TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP140/141/142 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP145T : TIP146T : TIP147T VCBO -60
SemiHow
SemiHow
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7 TIP147T   Trans Darlington PNP 100V 10A 3-Pin(3+Tab) TO-220AB Bulk

New Jersey Semiconductor
New Jersey Semiconductor
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6 TIP147T   Trans Darlington PNP 100V 10A 3-Pin(3+Tab) TO-220AB Bulk

New Jersey Semiconductor
New Jersey Semiconductor
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5 TIP147T   POWER TRANSISTORS(10A/60-100V/80W)

A A A A
Mospec Semiconductor
Mospec Semiconductor
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4 TIP147T   Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification TIP147T DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type TIP142T APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -1
Inchange Semiconductor
Inchange Semiconductor
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3 TIP147T   PNP Epitaxial Silicon Darlington Transistor

TIP147T — PNP Epitaxial Silicon Darlington Transistor November 2014 TIP147T PNP Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • High DC Current Gain: hFE = 1000 at VCE = -4 V, IC = -5 A (Minimum) • Industrial Use • Complement to TIP142T Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP147T TIP147TTU Top Mark TIP147T TIP147T Package TO-220 3L (Single Gauge) T
Fairchild Semiconductor
Fairchild Semiconductor
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Номер в каталоге Описание Производители PDF
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Fairchild Semiconductor
Fairchild Semiconductor
pdf
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HYDIS
HYDIS
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