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TIP140 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
21 TIP140   NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN)

TIP140/141/142 HIGH DC CURRENT GAIN NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR •Complementary to TIP145/146/147 SC-65 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :TIP140 TIP141 TIP142 Collector-EmitterVoltage :TIP140 TIP141 TIP142 Emitter-Base voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature Symbol VCBO Rating 60 80 100 60 80 100 5 10 15 0.5 125 150 -50~150 Unit V V V V V V V A A A
Wing Shing Computer Components
Wing Shing Computer Components
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20 TIP140   COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

® TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 1 APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP140, TIP141 and TIP142 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration, mounted in TO-218 plastic package. They
STMicroelectronics
STMicroelectronics
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19 TIP140   NPN SILICON POWER DARLINGTONS

TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q Designed for Complementary Use with TIP145, TIP146 and TIP147 125 W at 25°C Case Temperature B SOT-93 PACKAGE (TOP VIEW) 1 q q q 10 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP140 Collector-base voltage
Power Innovations Limited
Power Innovations Limited
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18 TIP140   DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145 = 80 Vdc (Min) − TIP141, TIP146 = 100 Vdc (Min) − TIP142, TIP147 • Monolithic Construction with Built−In Base−Emitter Shunt Resistor • These
ON Semiconductor
ON Semiconductor
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17 TIP140   Trans Darlington NPN 60V 10A 3-Pin(3+Tab) TO-218 Box

New Jersey Semiconductor
New Jersey Semiconductor
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16 TIP140   10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP140/D Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140, TIP145 VCEO(sus) = 80 Vdc (Min) — TIP141, TIP146 VCEO(sus) = 100 Vdc (Min) — TIP142, TIP147 • Monolithic Construction with Built–In Base–Emitter
Motorola
Motorola
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15 TIP140   POWER TRANSISTORS(10A/60-100V/125W)

A A A A
Mospec Semiconductor
Mospec Semiconductor
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14 TIP140   Monolithic Construction With Built In Base- Emitter Shunt Resistors

TIP140/141/142 TIP140/141/142 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145/146/147 1 TO-3P NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP140 : TIP141 : TIP142 Value 60 80 100 60 80 100 5 10 15 0.5 125 150 - 65 ~ 150 Units V V V V V V V A A A W °C °C 1.Base 2.Collector 3.Emitter Equi
Fairchild Semiconductor
Fairchild Semiconductor
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