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TIP100 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
14 TIP100   Darlington NPN Power Transistors

Darlington Power Transistors (NPN) TIP100/101/102 Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams TO-220 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description TIP100 VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage IC Co
TAITRON
TAITRON
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13 TIP100   Monolithic Construction

TIP100/101/102 TIP100/101/102 ◎ SEMIHOW REV.A0,Oct 2007 TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP105/106/107 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP100 : TIP101 : TIP102 VCBO 60 80 100 V V V Colle
SemiHow
SemiHow
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12 TIP100   NPN SILICON POWER DARLINGTONS

TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q Designed for Complementary Use with TIP105, TIP106 and TIP107 80 W at 25°C Case Temperature 8 A Continuous Collector Current Maximum VCE(sat) of 2.5 V at IC = 8 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP100 Collector-base volta
Power Innovations Limited
Power Innovations Limited
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11 TIP100   Plastic Medium-Power Complementary Silicon Transistors

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105 = 80 Vdc (Min) − TIP101, TIP106 = 100 Vdc (Min) − TIP102, TIP107 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Ad
ON Semiconductor
ON Semiconductor
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10 TIP100   Silicon NPN Darlington Power Amp

TIP100, TIP101, TIP102 Silicon NPN Darlington Power Amp, Switch TO−220 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector−Base TIP100 . Voltage, ........ V. .C.B.O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V TIP101 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE
NTE
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9 TIP100   Trans Darlington NPN 60V 8A 3-Pin(3+Tab) TO-220 Box

New Jersey Semiconductor
New Jersey Semiconductor
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8 TIP100   DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP100/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc VCEO(sus) = 60 Vdc (Min) — TIP100, TIP105 VCEO(sus) = 80 Vdc (Min) — TIP101, TIP106 VCEO(sus) = 100 Vdc (Min) — TIP102, TIP107 • Low Collector–Emitter Saturation Voltage — VCE(sat)
Motorola
Motorola
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7 TIP100   POWER TRANSISTORS(8A/60-100V/80W)

A A A A
Mospec Semiconductor
Mospec Semiconductor
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Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
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HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
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