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TC518512FTL-80 даташитФункция этой детали – «SilICon Gate Cmos Pseudo StatIC Ram». |
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Номер в каталоге | Производители | Описание | |
TC518512FTL-80 | Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM TOSHIBA
TC518512PL/FL/FIL/TRL-70/00/10
SILICON GATE CMOS
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!:!!gh speed and low power storage. The TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two types of refreshing - auto ref |
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TC518512FTL-80DR | Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM rOSHIBA
TC518512PL/FL/FIL/TRL-70(DR) /80 (DR) /10 (DR)
SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description
The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!J!gh speed and low power storage. The TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two types of refres |
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TC518512FTL-80LT | Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM rOSHIBA
TC518512PL/FL/FIL/TRL-70(Ln/80(Ln /10(Ln
SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description
The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .b!gh speed and low power storage. The TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two types of refreshing - |
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TC518512FTL-80LV | Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM TOSHIBA
TC518512PL/FL/FIL!fRL70LV/80LV/I0LV
SILICON GATE CMOS
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description
The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed ar}QJow power storage. The TC518512PL-LVoperates from a single 3.0V - 5.5V power supply. Refreshing is supported by a refresh (05'RFSH) input which enables two types of refreshi |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |