даташит TC5081P IC Даташиты PDF

	Номер в каталоге	Описание	Производители	PDF
1	TC5081P	CMOS Phase Comparator TC5081P IL08D C-MOS PHASE COMPARATOR —SIDE VIEW— PHASE COMPARATOR 1 A OUT 2 A IN 3 PD OUT 4 PHASE OUT VDD 5 6 NC 7 FS IN 8 FR IN GND 9 PHASE COMPARATOR TIMING CHART FS IN FR IN PD OUT HIGH IMPEDANCE PHASE OUT w w w t a .D S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c	ETC

TC5 даташита ( переписка )

Номер в каталоге	Описание	Производители	PDF
TC551001BTRL-85L	SILICON GATE CMOS STATIC RAM TOSHIBA TC551001BPL/BFL/BFIL/BTRL-70L/85L/IOL SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551 001 BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit t	Toshiba
TC511001J-85	DRAM TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511001 P/J/Z-S5, TC511001 P/J/Z-l0 TC511 001 P/J/Z-12 The TC5ll00lP/J/Z is the new generation dynamic R&~ organized 1,048,576 ~vords by 1 bit. The TC5ll00lP/J/Z utilizes TOSHIBA's ca	Toshiba
TC55257CFTL-70	SILICON GATE CMOS STATIC RAM TOSHIBA TC55257CPL/CFL/CSPL/CFIL/CfRL-70/85/10 SILICON GATE CMOS PRELIMINARY 32,768 WORD x 8 BIT STATIC RAM Description The TC55257CPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced c	Toshiba
TC514800AZ-70	DRAM DataSheet4 U .com DataSheet4 U .com DataSheet4 U .com Datasheet.esaSheet	Toshiba
TC55BS4258J	256K x 4-Bit Synchronous Static RAM TOSHIBA 262,144 WORD x 4 BIT SYNCHRONOUS STATIC RAM with Input Registers, Output Registers and Pass-Through Feature 1l:55BS4258]-10/12 PRELIMINARY Description The TC55BS4258J is a 1,048,576 bit synchronous static random access memory fabricated using BiCMOS technology and orga	Toshiba
TC518129AFL-12	CMOS Pseudo Static RAM DataSheet4 U .com DataSheet4 U .com DataSheet4 U .com DataSheet4 U .com DataSheet4 U .com DataSheet4 U .com DataSheet4 U .com Datasheet.es	Toshiba
TC518512FTL-80	SILICON GATE CMOS PSEUDO STATIC RAM TOSHIBA TC518512PL/FL/FIL/TRL-70/00/10 SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with	Toshiba
TC59LM906AMG-37	MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC59LM914/06AMG-37,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 512Mbits Network FCRAM1 (SSTL_18 / HSTL_Interface) − 4,194,304-WORDS × 8 BANKS × 16-BITS − 8,388,608-WORDS × 8 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Dou	Toshiba Semiconductor
TC551001ATRL-85LT	SILICON GATE CMOS STATIC RAM TOSHIBA SILICON GATE CMOS 1nC55100lAPL/PUFL/P.U![L/l1]{L-70/85/10OL1) 131,072 WORD x 8 BIT STATIC RAM Description The TC551 001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced ci	Toshiba
TC55257BSPL-85LT	SILICON GATE CMOS STATIC RAM TOSHIBA SILICON GATE CMOS TC55257BPL/BFL/BSPL/BFIL/BTRL-85/10(Ln 32,768 WORD x 8 BIT STATIC RAM Description The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techn	Toshiba

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Последние обновления

Номер в каталоге	Описание	Производители	PDF
CD4515BC	The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.	Fairchild Semiconductor
HV101WU1-1E6	HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.	HYDIS

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свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).

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