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TB2912HQ даташитФункция этой детали – «Maximum Power 41 W Btl X 4-ch Audio». |
Показать результаты поиска |
| Номер в каталоге | Производители | Описание | |
| TB2912HQ |  Toshiba Semiconductor |
Maximum Power 41 W BTL x 4-ch Audio Power IC TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
TB2912HQ
TB2912HQ
Maximum Power 41 W BTL × 4-ch Audio Power IC
The TB2912HQ is 4ch audio amplifier for car audio application. This IC can generate high power, high quality sound output, POUT MAX = 41 W, using a pure complementary P-ch and N-ch DMOS output stage. The built-in self diagnosis function which is included can be controlled via I2C BUS. In addition, stand-by and mute function, and various Protection feature are included.
Features
Weight: 7.7 g |
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Это результат поиска, начинающийся с "2912HQ", "TB291" |
| Номер в каталоге | Производители | Описание | |
| 2912A |  Intel |
PCM Transmit / Receive Filter |
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| 2SC2912 |  Sanyo |
Epitaxial Planar Silicon Transistor This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manu |
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| 2SK2912 |  Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK2912(L), 2SK2912(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-495 1st. Edition Features
• Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D 1 1 G 2 3
2
3
1. Gate 2 |
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| 2SK2912L | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK2912(L), 2SK2912(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-495 1st. Edition Features
• Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D 1 1 G 2 3
2
3
1. Gate 2 |
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| 2SK2912S | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK2912(L), 2SK2912(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-495 1st. Edition Features
• Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D 1 1 G 2 3
2
3
1. Gate 2 |
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| AM27PS29125BLA |  Advanced Micro Devices |
16/384-BIT (2048 x 8) BIPOLAR PROM |
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Последние обновления
| Номер в каталоге | Производители | Описание | |
| 2N3904 |  Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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