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TB2901HQ даташитФункция этой детали – «4-ch Audio Power IC». |
Показать результаты поиска |
| Номер в каталоге | Производители | Описание | |
| TB2901HQ |  Toshiba Semiconductor |
4-ch Audio Power IC TB2901HQ(O)
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
TB2901HQ
Maximum Power 47 W BTL × 4-ch Audio Power IC
The TB2901HQ is 4-ch BTL audio amplifier for car audio applications. This IC can generate higher power: POUT MAX = 47 W as it includes the pure complementary P-ch and N-ch DMOS output stage. It is designed to yield low distortion ratio for 4-ch BTL audio power amplifier, built-in standby function, muting function, and various kinds of protectors. Additionally, high-side sw |
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Это результат поиска, начинающийся с "2901HQ", "TB290" |
| Номер в каталоге | Производители | Описание | |
| 2SC2901 |  NEC |
NPN SILICON TRANSISTOR |
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| 2SC2901 |  SEMTECH |
NPN Silicon Epitaxial Planar Transistor ST 2SC2901
NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications.
The transistor is subdivided into two groups L and K, according to its DC current gain.
On special request, these transistors can be manufactured in different p |
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| 2SC2901 |  Bluecolour |
NPN Silicon Epitaxial Planar Transistor 2SC2901 NPN Silicon Epitaxial Planar Transistor
for general purpose amplifier and high speed switching applications.
The transistor is subdivided into two groups L and K, according to its DC current gain.
On special request, these transistors can be manufactured in different pin |
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| 2SC2901 |  PACO |
NPN Silicon Epitaxial Planar Transistor ST 2SC2901
NPN Silicon Epitaxial Planar Transistor
for general purpose amplifier and high speed switching applications.
The transistor is subdivided into two groups L and K, according to its DC current gain.
On special request, these transistors can be manufactured in differen |
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| 2SK2901-01L |  Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET 2SK2901-01L,S
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
T-Pack(L)
FUJI POWER MOS-FET
T-Pack(S)
10 +0.5
0.9 ±0.3
4.5 ±0.2 1.32
1.5 Max
9.3 ±0.5
1.2 ±0.2
0.8 —0.1 5.08 2.7
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| 2SK2901-01S | Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET 2SK2901-01L,S
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
T-Pack(L)
FUJI POWER MOS-FET
T-Pack(S)
10 +0.5
0.9 ±0.3
4.5 ±0.2 1.32
1.5 Max
9.3 ±0.5
1.2 ±0.2
0.8 —0.1 5.08 2.7
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Последние обновления
| Номер в каталоге | Производители | Описание | |
| 2N3904 |  Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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| NE555 |  ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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