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T60N02R даташитФункция этой детали – «Power Mosfet ( Transistor )». |
Показать результаты поиска |
| Номер в каталоге | Производители | Описание | |
| T60N02R |  ON Semiconductor |
Power MOSFET ( Transistor ) NTD60N02R Power MOSFET
Features
62 A, 24 V, N−Channel, DPAK
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters Pb−Free Packages are Available
http://onsemi.com
V(BR)DSS 24 V
RDS(on) TYP 8.4 mW @ 10 V
ID MAX 62 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain−to−Source Voltage Gate−to−Sour |
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Это результат поиска, начинающийся с "60N02R", "T60N" |
| Номер в каталоге | Производители | Описание | |
| NTD60N02R |  ON |
Power MOSFET 62 A / 24 V / N-Channel / DPAK NTD60N02R Power MOSFET
Features
62 A, 24 V, N−Channel, DPAK
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in Hig |
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| NTD60N02R-001 | ON |
Power MOSFET 62 A / 24 V / N-Channel / DPAK NTD60N02R Power MOSFET
Features
62 A, 24 V, N−Channel, DPAK
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in Hig |
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| NTD60N02R-032 | ON |
Power MOSFET 62 A / 24 V / N-Channel / DPAK NTD60N02R Power MOSFET
Features
62 A, 24 V, N−Channel, DPAK
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in Hig |
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| NTD60N02R-032G | ON |
Power MOSFET 62 A / 24 V / N-Channel / DPAK NTD60N02R Power MOSFET
Features
62 A, 24 V, N−Channel, DPAK
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in Hig |
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| NTD60N02R-1G | ON |
Power MOSFET 62 A / 24 V / N-Channel / DPAK NTD60N02R Power MOSFET
Features
62 A, 24 V, N−Channel, DPAK
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in Hig |
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| NTD60N02RG | ON |
Power MOSFET 62 A / 24 V / N-Channel / DPAK NTD60N02R Power MOSFET
Features
62 A, 24 V, N−Channel, DPAK
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in Hig |
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Последние обновления
| Номер в каталоге | Производители | Описание | |
| 2N3904 |  Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
| NE555 |  ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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