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STi1010 Single-chip worldwide iDTV processor Data Brief Features ■ ■ ■ ■ ■ ■ ■ 32-Bit RISC ST40 CPU, 266 MHz, 480 MIPs DDR2 unified memory interface, 250 MHz clock Transport stream demultiplexer with DES, DVB and Multi2 descrambler CableCard and DVB-CI interface MP@ML and MP@HL MPEG2 video decoder 24-bit audio DSP core, MPEG1(layers 1,2,3), MPEG2, MPEG2-AAC, Dolby® Digital, MP3 decoder Analog video input: CVBS, SVHS(Y/C), Component (from SD up to HD 720p, 1080i, 1080p) PC input, an

STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS(on) max ID Pw STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 620 V < 0.75 Ω 8.4 A(1) 8.4 A 30 W 125 W 1. Limited by package ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Improved diode reverse recovery characteristics

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes VDSS (@Tjmax) RDS(on) max ID STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND 650 V < 0.45 Ω 10 A 10 A(1) 10 A 10 A 10 A 1. Limited only by maximum temperature allowed ■ The worldwide best RDS(on)* area amongst the fast recovery diode devices ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resist

STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' r

STB120NH03L - STI120NH03L STP120NH03L N-channel 30V - 0.005Ω - 60A - TO-220 / D2PAK / I2PAK STripFET™ Power MOSFET for DC-DC conversion General features Type STB120NH03L STP120NH03L STI120NH03L VDSS 30V 30V 30V RDS(on) <0.0055Ω <0.0055Ω <0.0055Ω ID 60(1) 60(1) 60(1) TO-220 3 1 2 3 1 D2PAK 1. Value limited by wire bonding ■ ■ ■ ■ RDS(on) *Qg industry’s benchmark Low Conduction losses reduced Switching losses reduced Low Threshold device I2PAK 3 12 Description These devices ut

STI13005-1 High voltage fast-switching NPN power transistor Preliminary data Features ■ STI13005-1 is opposite pin out versus standard IPAK package ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Application ■ Switch mode power supplies (AC-DC converters) IPAK 3 2 1 Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge t

STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages Datasheet — production data Features Order codes STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N VDSS (@Tjmax) 650 V RDS(on) max < 0.36 Ω ID 11 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance TAB 3 2 1 TO-220FP 123 I²PAK TAB TAB 3 2 1 TO-220 3 2 1 IPAK 3 2 1 TO-247 Applicatio

STF14NM50N, STI14NM50N, STP14NM50N N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages Datasheet - production data Features 3 2 1 TO-220FP TAB TAB I2PAK 1 2 3 TO-220 3 2 1 Figure 1. Internal schematic diagram '7$% * 6 $0Y Order codes STF14NM50N STI14NM50N STP14NM50N VDS @ TJmax RDS(on) max ID 550 V 0.32 Ω 12 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching ap