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STI даташит ( Datasheet PDF , Даташиты ) |
Номер в каталоге | Описание | Производители | ||
94 | STI1010 | Single-chip worldwide iDTV processor
STi1010
Single-chip worldwide iDTV processor
Data Brief
Features
■ ■ ■ ■ ■ ■
■
32-Bit RISC ST40 CPU, 266 MHz, 480 MIPs DDR2 unified memory interface, 250 MHz clock Transport stream demultiplexer with DES, DVB and Multi2 descrambler CableCard and DVB-CI interface MP@ML and MP@HL MPEG2 video decoder 24-bit audio DSP core, MPEG1(layers 1,2,3), MPEG2, MPEG2-AAC, Dolby® Digital, MP3 decoder Analog video input: CVBS, SVHS(Y/C), Component (from SD up to HD 720p, 1080i, 1080p) PC input, an |
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93 | STI10N62K3 | N-channel Power MOSFET STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages
Datasheet − production data
Features
Type
VDSS
RDS(on) max
ID
Pw
STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3
620 V
< 0.75 Ω
8.4 A(1) 8.4 A
30 W 125 W
1. Limited by package
■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Improved diode reverse recovery
characteristics |
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92 | STI11NM60ND | Power MOSFET STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
Features
Order codes VDSS (@Tjmax) RDS(on) max ID
STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND
650 V
< 0.45 Ω
10 A 10 A(1) 10 A 10 A 10 A
1. Limited only by maximum temperature allowed
■ The worldwide best RDS(on)* area amongst the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resist |
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91 | STI11NM80 | N-CHANNEL Power MOSFET STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Order codes VDSS
RDS(on) max
RDS(on)*Qg
ID
STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80
< 0.40 Ω
14Ω*nC
11 A
■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry
Applications
■ Switching applications
Description
These N-channel Power MOSFETs are developed using STMicroelectronics' r |
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90 | STI120NH03L | N-CHANNEL POWER MOSFET
STB120NH03L - STI120NH03L STP120NH03L
N-channel 30V - 0.005Ω - 60A - TO-220 / D2PAK / I2PAK STripFET™ Power MOSFET for DC-DC conversion
General features
Type STB120NH03L STP120NH03L STI120NH03L VDSS 30V 30V 30V RDS(on) <0.0055Ω <0.0055Ω <0.0055Ω ID 60(1) 60(1) 60(1) TO-220
3 1 2
3 1
D2PAK
1. Value limited by wire bonding ■ ■ ■ ■
RDS(on) *Qg industry’s benchmark Low Conduction losses reduced Switching losses reduced Low Threshold device
I2PAK
3 12
Description
These devices ut |
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89 | STI13005-1 | High voltage fast-switching NPN power transistor STI13005-1
High voltage fast-switching NPN power transistor
Preliminary data
Features
■ STI13005-1 is opposite pin out versus standard IPAK package
■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed
Application
■ Switch mode power supplies (AC-DC converters)
IPAK
3
2 1
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge t |
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88 | STI13NM60N | N-CHANNEL Power MOSFET STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N
N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages
Datasheet — production data
Features
Order codes
STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N
VDSS (@Tjmax)
650 V
RDS(on) max
< 0.36 Ω
ID 11 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
TAB
3 2 1
TO-220FP
123
I²PAK
TAB TAB
3 2 1
TO-220
3 2 1
IPAK
3 2 1
TO-247
Applicatio |
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87 | STI14NM50N | N-channel Power MOSFET STF14NM50N, STI14NM50N, STP14NM50N
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages
Datasheet - production data
Features
3 2 1
TO-220FP
TAB TAB
I2PAK 1 2 3
TO-220
3 2
1
Figure 1. Internal schematic diagram
'7$%
* 6
$0Y
Order codes
STF14NM50N STI14NM50N STP14NM50N
VDS @ TJmax
RDS(on) max
ID
550 V
0.32 Ω 12 A
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance
Applications
• Switching ap |
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Номер в каталоге | Описание | Производители | |
CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. |
![]() Fairchild Semiconductor |
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HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. |
![]() HYDIS |
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На первой странице data sheets приводятся: |
DataSheet26.com | 2020 | Контакты |