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Datasheet STH8NB90FI Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | STH8NB90FI | N-CHANNEL MOSFET N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET
TYPE STW8NB90 STH8NB90FI
s s s s s
STW8NB90 STH8NB90FI
VDSS 900 V 900 V
RDS(on) < 1.45 Ω < 1.45 Ω
ID 8A 5A
TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GAT | ST Microelectronics | mosfet |
STH Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | STH1061 | NPN Plastic Power Transistor
ST H1061
NPN Plastic Power Transistor Low frequency power amplifier
TO-220 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Te SEMTECH ELECTRONICS transistor | | |
2 | STH10NA50 | N-CHANNEL Power MOS MOSFET STH10NA50/FI STW10NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STH10NA50 STH10NA50FI STW10NA50
s s s s s s s
V DSS 500 V 500 V 500 V
R DS( on) < 0.8 Ω < 0.8 Ω < 0.8 Ω
ID 9.6 A 5.6 A 9.6 A
TO-247
TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALAN ST Microelectronics mosfet | | |
3 | STH10NA50FI | N-CHANNEL Power MOS MOSFET STH10NA50/FI STW10NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STH10NA50 STH10NA50FI STW10NA50
s s s s s s s
V DSS 500 V 500 V 500 V
R DS( on) < 0.8 Ω < 0.8 Ω < 0.8 Ω
ID 9.6 A 5.6 A 9.6 A
TO-247
TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALAN ST Microelectronics mosfet | | |
4 | STH10NC60 | N-CHANNEL Power MOS MOSFET N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET
TYPE STW10NC60 STH10NC60FI
s s s s s
STW10NC60 STH10NC60FI
VDSS 600 V 600 V
RDS(on) < 0.75 Ω < 0.75 Ω
ID 10 A 10 A (*)
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BEN ST Microelectronics mosfet | | |
5 | STH10NC60FI | N-CHANNEL Power MOS MOSFET N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET
TYPE STW10NC60 STH10NC60FI
s s s s s
STW10NC60 STH10NC60FI
VDSS 600 V 600 V
RDS(on) < 0.75 Ω < 0.75 Ω
ID 10 A 10 A (*)
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BEN ST Microelectronics mosfet | | |
6 | STH10NK60ZFI | N-CHANNEL Power MOSFET STP10NK60Z/FP, STB10NK60Z/-1 STH10NK60ZFI, STW10NK60Z
N-CHANNEL600V-0.65 Ω-10ATO-220/FP/D 2PAK/I2PAK/TO-247/ISOWATT218
Zener-Protected SuperMESH™ Power MOSFET
R DS(on) < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 Ω Ω Ω Ω Ω Ω ID 10 10 10 10 10 10 A A A A A A Pw 115 W 115 W 35 W 115 W 35 STMicroelectronics mosfet | | |
7 | STH12N120K5-2 | N-CHANNEL Power MOS MOSFET STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5
N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247 long leads
Datasheet - production data
H 2PAK-2
TO-220
Features
Order codes
VDS RDS(on) max. ID PTOT
STH12N120K5-2
STP12N120K5 1200 V
STW12N STMicroelectronics mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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