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Datasheet STAP85050 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | STAP85050 | RF power transistor PD20010-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Features
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Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance wit |
ST Microelectronics |
STAP85 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
STAP85025S | N-channel enhancement-mode lateral MOSFETs |
STMicroelectronics |
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STAP85025 | Transistors |
ST Microelectronics |
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STAP85050 | RF power transistor |
ST Microelectronics |
Esta página es del resultado de búsqueda del STAP85050. Si pulsa el resultado de búsqueda de STAP85050 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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