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SS8550 даташитФункция этой детали – «SilICon Epitaxial Planar Transistor». |
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Номер в каталоге | Производители | Описание | |
SS8550 | ![]() Weitron Technology |
Plastic-Encapsulate Transistors PNP Silicon
SS8550
Plastic-Encapsulate Transistors PNP Silicon
2 BASE 1 EMITTER
COLLECTOR 3
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg SS8550 -25 -40 -5.0 -1.5 1.0 150 -55 to +150 Unit Vdc Vdc Vdc Adc W C C
DEVICE MARKING SS8550=SS8550D
ELECTRICAL CHARACTERISTICS
Ch |
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SS8550 | ![]() TGS |
PNP Transistor TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
SS8550 TRANSISTOR (PNP)
TO-92
FEATURES Power dissipation PC : 1 W (Ta=25 ℃)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
-40 V
VCEO
Collector-Emitter Voltage
-25 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous -1.5 A
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
1. EMITTER 2. BASE 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ un |
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SS8550 | ![]() SeCoS |
PNP Silicon General Purpose Transistor Elektronische Bauelemente
SS8550
PNP Silicon General Purpose Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
z Power dissipation PCM : 0.3 W
1 Base
z Collector Current
ICM : - 1.5 A
z Collector-base voltage
V(BR)CBO : - 40 V
z Operating & storage junction temperature
TJ, TSTG : - 55°C ~ + 150°C
Collector 3
2 Emitter
1 Base
3 Collector 2
Emitter
A L
3
Top View
12
VG
BS D
K
J
C H
SOT-23 Dim Min Max
A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G |
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SS8550 | ![]() KOO CHIN |
PNP Transistor SS8550 TRANSISTOR (PNP)
SOT-23
FEATURES Complimentary to SS8050
MARKING: Y2
1. Base 2.Emitter 3.Collector
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value -40 -25 -5 -1.5 0.3 150
-55-150
Units V V V A W
℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Colle |
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SS8550 | ![]() Jin Yu Semiconductor |
PNP Silicon General Purpose Transistor SS8 550
TRANSISTOR(PNP)
FEATURES High Collector Current Complementary to SS8050
SOT–23
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-25
VEBO Emitter-Base Voltage
-5
IC Collector Current
-1.5
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
417
Tj Junction Temperature Tstg Storage Temperature
150 -55~+150
Unit V V V A
mW ℃/W
℃ ℃
1. BASE 2. EMITTER 3. COLLE |
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SS8550 | ![]() Galaxy Semi-Conductor |
Silicon Epitaxial Planar Transistor BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z z z Collector Current.(IC= 1.5A) Complementary To SS8550. Collector Dissipation: PC=0.3W (TC=25°C)
Production specification
SS8550
Pb
Lead-free
APPLICATIONS
z High Collector Current.
SOT-23
ORDERING INFORMATION
Type No. SS8550 Marking Y2 Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
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SS8550 | ![]() Fairchild |
PNP Epitaxial Silicon Transistor SS8550 — PNP Epitaxial Silicon Transistor
November 2014
SS8550 PNP Epitaxial Silicon Transistor
Features
• 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: IC = 1.5 A
1 TO-92 1. Emitter 2. Base 3. Collector
Ordering Information
Part Number SS8550BBU SS8550CBU SS8550CTA SS8550DBU SS8550DTA
Top Mark S8550 S8550 S8550 S8550 S8550
Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L
Packing Method Bulk Bulk Ammo Bulk Ammo
Absolute Maximum R |
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SS8550 | ![]() Daya Electric |
TO-92 Plastic-Encapsulate Transistors
TO-92
SS8550
TRANSISTOR (PNP)
Plastic-Encapsulate Transistors
TO-92
FEATURES Power dissipation PC : 1 W (TA=25℃)
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Junction Temperature Storage Temperature Value -40 -25 -5 -1.5 150 -55-150 Units V V V A ℃ ℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise |
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Последние обновления

Номер в каталоге | Производители | Описание | |
2N3904 | ![]() Unisonic Technologies |
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