SS8550 даташит

SS8550 Plastic-Encapsulate Transistors PNP Silicon 2 BASE 1 EMITTER COLLECTOR 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg SS8550 -25 -40 -5.0 -1.5 1.0 150 -55 to +150 Unit Vdc Vdc Vdc Adc W C C DEVICE MARKING SS8550=SS8550D ELECTRICAL CHARACTERISTICS Ch

TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PC : 1 W (Ta=25 ℃) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ un

Elektronische Bauelemente SS8550 PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z Power dissipation PCM : 0.3 W 1 Base z Collector Current ICM : - 1.5 A z Collector-base voltage V(BR)CBO : - 40 V z Operating & storage junction temperature TJ, TSTG : - 55°C ~ + 150°C Collector 3 2 Emitter 1 Base 3 Collector 2 Emitter A L 3 Top View 12 VG BS D K J C H SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G

SS8550 TRANSISTOR (PNP) SOT-23 FEATURES Complimentary to SS8050 MARKING: Y2 1. Base 2.Emitter 3.Collector MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -25 -5 -1.5 0.3 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Colle

SS8 550 TRANSISTOR(PNP) FEATURES  High Collector Current  Complementary to SS8050 SOT–23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current -1.5 PC Collector Power Dissipation 300 RΘJA Thermal Resistance From Junction To Ambient 417 Tj Junction Temperature Tstg Storage Temperature 150 -55～+150 Unit V V V A mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLE

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z Collector Current.(IC= 1.5A） Complementary To SS8550. Collector Dissipation: PC=0.3W (TC=25°C) Production specification SS8550 Pb Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION Type No. SS8550 Marking Y2 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

SS8550 — PNP Epitaxial Silicon Transistor November 2014 SS8550 PNP Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: IC = 1.5 A 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number SS8550BBU SS8550CBU SS8550CTA SS8550DBU SS8550DTA Top Mark S8550 S8550 S8550 S8550 S8550 Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L Packing Method Bulk Bulk Ammo Bulk Ammo Absolute Maximum R

TO-92 SS8550 TRANSISTOR (PNP) Plastic-Encapsulate Transistors TO-92 FEATURES Power dissipation PC : 1 W (TA=25℃) 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Junction Temperature Storage Temperature Value -40 -25 -5 -1.5 150 -55-150 Units V V V A ℃ ℃ 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise