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SS8050 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
17 SS8050   Plastic-Encapsulate Transistors

DATA SHEET SEMICONDUCTOR TO-92 Plastic-Encapsulate Transistors FEATURES Power dissipation PCM : 1 W :2W (TA=25℃) (TC=25℃) SS8050 TRANSISTOR (NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous TJ, Tstg Junction and Storage Temperature Value 40 25 5 1500 -55-150 123 Units V V V mA ℃ *These ratings are limiting values above
YS
YS
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16 SS8050   TRANSISTOR

SS8050 TRANSISTOR (NPN)                               !    "         (()  )*                  !'        (()+$  ,(-             . /0   . #$%&'      " $                                                                www.Dat
Wing Shing Computer
Wing Shing Computer
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15 SS8050   NPN General Purpose Transistors

NPN General Purpose Transistors P b Lead(Pb)-Free SS8050 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 MAXIMUM RATINGS(TA=25˚C unless otherwise noted) Rating Collector-Base Voltage Symbol VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current-Continuous IC Total Device Dissipation TA=25°C Junction and Storage, Temperature PD TJ,Tstg Value 40 25 5 1.5 1.0 -55 to +150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA=25˚C unless otherwise noted) Characteristics Symbol Min Colle
Weitron Technology
Weitron Technology
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14 SS8050   NPN Silicon General Purpose Transistor

Elektronische Bauelemente SS8050 NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Complimentary to SS8550  Power Dissipation PCM : 0.3W  Collector Current ICM : 1.5A  Collector - Base Voltage V(BR)CBO : 40V  Operating & Storage junction temperature TJ, TSTG : -55℃ ~ +150℃ MARKING : Y1  Base MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltag
SeCoS
SeCoS
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13 SS8050   NPN EPITAXIAL SILICON TRANSISTOR

SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • Complimentary to SS8550 Ε Collector Current IC=1.5A • Collector Dissipation:PC=2W (TC=25 ) ÎABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 1. Emitter 2. Base 3. Collector 40 25 6 1.5 1 150 -65 ~ 150
Samsung
Samsung
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12 SS8050   NPN Silicon Transistors

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 SS8050 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55OC to +150OC • Marking Code: SS8050 Pin Configuration C BE Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Max Units V(BR)CBO Collector-Base
MCC
MCC
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11 SS8050   NPN Transistor

SS8050 TRANSISTOR (NPN) SOT-23 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 25 5 1.5 0.3 150 -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Units V V V A W ℃ ℃ Parameter Symbo
KOO CHIN
KOO CHIN
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10 SS8050   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification SS8050 DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC =0.8A APPLICATIONS ·Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE 40 25 5 1.5 3
INCHANGE
INCHANGE
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