Datasheet SPP3467 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SPP3467	P-Channel Enhancement Mode MOSFET SPP3467 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3467 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	SYNC POWER

SPP3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SPP3407DS23RGB	P-Channel Enhancement Mode MOSFET SPP3407D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3407D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistan	SYNC POWER
SPP30N10	SIPMOS Power Transistor Preliminary data SPI35N10 SPP35N10,SPB35N10 SIPMOS Power-Transistor Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 44 35 P-TO220-3-1 V A m Type SPP35N10 SP	Infineon Technologies
SPP3052	P-Channel Enhancement Mode MOSFET SPP3052 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3052 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance	SYNC POWER

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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