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SPD03N60S5 даташитФункция этой детали – «Cool Mos Power Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
SPD03N60S5 | Infineon Technologies |
Cool MOS Power Transistor SPU03N60S5 SPD03N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
VDS RDS(on) ID
P-TO252.
2 3 1
600 1.4 3.2
P-TO251.
V Ω A
1
2
3
Type
Package
Ordering Code
SPU03N60S5 SPD03N60S5
P-TO251. P-TO252.
Q67040-S4227 Q67040-S4187
Marking 03N60S5
03N60S5
Maximum Ratings Parameter
Continuous drain current
TC = 25 °C TC = 100 °C
S |
Это результат поиска, начинающийся с "03N60S5", "SPD03N6" |
Номер в каталоге | Производители | Описание | |
03N60S5 | INFINEON |
SPP03N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPP03N60S5
VDS RDS(on)
ID
600 V 1.4 Ω 3.2 A
P |
|
SPB03N60S5 | Infineon Technologies |
Cool MOS Power Transistor SPP03N60S5 SPB03N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
P-TO220-3-1
VDS RDS(on) ID
P |
|
SPN03N60S5 | Infineon Technologies |
Cool MOS Power Transistor SPN03N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
2 1
VPS05163
VDS RDS(on) ID
600 1.4 0.7
SOT-223
4
V Ω A
3
Type |
|
SPP03N60S5 | Infineon Technologies |
Power Transistor Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPP03N60S5
VDS RDS(on)
ID
600 V 1.4 Ω 3.2 A
P |
|
SPU03N60S5 | Infineon Technologies |
Cool MOS Power Transistor SPU03N60S5 SPD03N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
VDS RDS(on) ID
P-TO252.
2 3 |
|
SPD03N60C3 | Infineon Technologies |
Cool MOS& Power Transistor 2B>PQNB % FUf aUe_dcY_^Qah XYWX e_cQWU cUSX^__Wh % McaQ _f WQcU SXQaWU % HUaY_TYS QeQQ^SXU aQcUT % >gcaU]U T3)T2 aQcUT % AYWX `UQ[ SdaaU^c SQ`QRYYch % B]`a_eUT caQ^bS_^TdScQ^SU
VDS Tjmjmaxax *=K"_^#
'=
0/* +(. -(,
N ! 9
H*'LG,/+
H*'LG,/,
;UMB KH=*-F0* |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |