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SI2305 даташит ( Datasheet PDF , Даташиты ) |
Номер в каталоге | Описание | Производители | ||
7 | SI2305 | P-Channel Enhancement Mode Field Effect Transistor MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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SI2305
• • • • • • • •
Features
Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter SOT-23 Package Marking Code: S5
P-Channel Enhancement Mode Field Effect Transistor
SOT-23
A D
Maximum Ratings @ 25OC |
![]() MCC |
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6 | SI2305 | 20V P-Channel Enhancement Mode MOSFET SI2305
20V P-Channel Enhancement Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A
130mΩ 190mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
G
S
SOT-23(PACKAGE)
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unl |
![]() HT Semi |
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5 | SI2305 | p-Channel MOSFET Í·îíðë Ðóݸ¿²²»´ ïòîëóÉô ïòèóÊ øÙóÍ÷ ÓÑÍÚÛÌ
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ßÞÍÑÔËÌÛ Ó |
![]() ETC |
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4 | SI2305ADS | P-Channel 8-V (D-S) MOSFET www.DataSheet.co.kr
New Product
Si2305ADS
Vishay Siliconix
P-Channel 8-V (D-S) MOSFET
FEATURES
ID (A) - 4.1 - 3.4 - 2.0 7.8 nC Qg (Typ.)
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 0.040 at VGS = - 4.5 V -8 0.060 at VGS = - 2.5 V 0.088 at VGS = - 1.8 V
• Halogen-free Option Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
RoHS
COMPLIANT
APPLICATIONS
• Load Switch • DC/DC Converter
TO-236 (SOT-23)
S 3 S 2 D G
G
1
Top View Si2305ADS (A5)* * Marking Code Ordering Information: Si2305ADS-T1-E3 (Lead (Pb) |
![]() Vishay Siliconix |
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3 | SI2305CDS | P-Channel 8 V (D-S) MOSFET www.DataSheet.co.kr
Si2305CDS
Vishay Siliconix
P-Channel 8 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) -8 RDS(on) (Ω) 0.035 at VGS = - 4.5 V 0.048 at VGS = - 2.5 V 0.065 at VGS = - 1.8 V ID (A)d - 5.8 - 5.0 - 4.3 12 nC Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
TO-236 (SOT-23)
APPLICATIONS
• Load Switch for Portable Devices • DC/DC Converter
S 3 D
G
1
S
2 G Top View Si2305CDS (N5)* * Mark |
![]() Vishay Siliconix |
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2 | SI2305DS | P-Channel 1.25-W/ 1.8-V (G-S) MOSFET Si2305DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–8 8
rDS(on) (W)
0.052 @ VGS = –4.5 V 0.071 @ VGS = –2.5 V 0.108 @ VGS = –1.8 V
ID (A)
"3.5 "3 "2
TO-236 (SOT-23)
G 1 3 S 2 D
Top View Si2305DS (A5)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation)a, b Operating |
![]() Vishay Siliconix |
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1 | SI2305DS | P-Channel Power MOSFE P-Channel Power MOSFE
Production specification
SI2305DS
DESCRIPTION
SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hight-density process is especially tailored tominimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits,and low in-line power loss are required. The product is in a very small o |
![]() TOPSKY |
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Номер в каталоге | Описание | Производители | |
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![]() Fairchild Semiconductor |
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HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. |
![]() HYDIS |
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DataSheet26.com | 2020 | Контакты |