|
SGB02N120 даташитФункция этой детали – «Fast S-igbt In Npt-technology». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
SGB02N120 | Infineon Technologies |
Fast S-IGBT in NPT-technology
SGP02N120,
Fast IGBT in NPT-technology
• 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
SGB02N120 SGD02N120
C
G
E
P-TO-252-3-1 (D-PAK) (TO-252AA)
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D²-PAK) (TO-263AB)
• Complete product spectrum and PSpice Models : ht |
Это результат поиска, начинающийся с "02N120", "SGB02N" |
Номер в каталоге | Производители | Описание | |
02N120 | Infineon Technologies |
SKP02N120 Datasheet.esaSheet4U.net
SKP02N120 SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Techno |
|
GB02N120 | Infineon Technologies AG |
SGB02N120
SGP02N120,
Fast IGBT in NPT-technology
• 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter dist |
|
SGD02N120 | Infineon Technologies |
Fast S-IGBT in NPT-technology
SGP02N120,
Fast IGBT in NPT-technology
• 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high rugg |
|
SGP02N120 | Infineon Technologies |
Fast S-IGBT in NPT-technology
SGP02N120,
Fast IGBT in NPT-technology
• 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high rugg |
|
SKB02N120 | Infineon Technologies AG |
IGBT SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Allowed number of short circuits: <1000; time between short circuits: >1s.
lower Eoff compared to previous generation Short circuit withstand time – 10 s Desig |
|
SKP02N120 | Infineon Technologies AG |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode SKP02N120 SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very t |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |