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SBL1640CT даташит

Функция этой детали – «Dual Schottky Barrier Rectifier».



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Номер в каталоге Производители Описание PDF
SBL1640CT Vishay Siliconix
Vishay Siliconix
  Dual Schottky Barrier Rectifier

SBL16xxCT, SBLF16xxCT & SBLB16xxCTSeries Vishay Semiconductors formerly General Semiconductor Dual Schottky Barrier Rectifier Reverse Voltage 30 and 40V Forward Current 16A ITO-220AB (SBLF16xxCT) 0.405 (10.27) 0.383 (9.72) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.140 (3.56) DIA. 0.130 (3.30) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.410 (10.41) 0.390 (9.91) 1 0.160 (4.06) 0.140 (3.56) PIN 2 3 0.603 (15.32) 0.573 (14
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SBL1640CT GOOD-ARK
GOOD-ARK
  Dual Schottky Barrier Rectifiers

SBL16xxCT, SBLF16xxCT & SBLB16xxCT Series Dual Schottky Barrier Rectifiers Reverse Voltage 30 to 40 Volts Forward Current 16.0 Amperes Features ‹ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ‹ Dual rectifier construction, positive center tap ‹ Metal silicon junction, majority carrier conduction ‹ Low power loss, high efficiency ‹ Guardring for overvoltage protection ‹ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ‹ High tem
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SBL1640CT General Semiconductor
General Semiconductor
  Schottky Rectifier ( Diode )

SBL1630CT AND SBL1640CT SCHOTTKY RECTIFIER Reverse Voltage - 30 and 40 Volts TO-220AB 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) DIA. 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) Forward Current - 16.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ High surge capability ♦ For use in low voltage, high frequency inverters, free w
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SBL1640CT GALAXY ELECTRICAL
GALAXY ELECTRICAL
  SCHOTTKY BARRIER RECTIFIER

BL GALAXY ELECTRICAL SBL1630CT---SBL16100CT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 --- 100 V CURRENT: 16 A FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC TO-220AB,molded plastic Terminals: Leads solderable per MIL- STD-750,Method 2026
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SBL1640CT EIC
EIC
  DUAL SCHOTTKY BARRIER RECTIFIERS

Certificate TH97/10561QM Certificate TW00/17276EM SBL1630CT ~ SBL1640CT PRV : 30 ~ 40 Volts Io : 16 Amperes FEATURES : * Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 * Dual rectifier construction, positive center tap * Metal silicon junction, majority carrier conduction * Low power loss, high efficiency * Guardring for overvoltage protection * For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications * High temperature soldering : 250°C/10
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SBL1640CT Diodes Incorporated
Diodes Incorporated
  16A SCHOTTKY BARRIER RECTIFIER

SBL1630CT - SBL1660CT 16A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 TO-220AB L B C K D A 1 2 3 Dim M Min 14.22 9.65 2.54 5.84 ¾ 12.70 2.29 0.51 3.53Æ 3.56 1.14
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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