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SAM9G20 даташитФункция этой детали – «Smart Arm-based Embedded Mpu». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
SAM9G20 | ATMEL Corporation |
SMART ARM-based Embedded MPU SAM9G20
Atmel | SMART ARM-based Embedded MPU
Description
The Atmel® | SMART SAM9G20 embedded microprocessor unit is based on the integration of an ARM926EJ-S™ processor with fast ROM and RAM memories and a wide range of peripherals. The SAM9G20 embeds an Ethernet MAC, one USB Device Port, and a dual port USB Host controller with on-chip USB transceivers. It also integrates several standard peripherals, such as the USART, SPI, TWI, Timer Counters, Synchronous Serial Controller, ADC and MultiMedia Card Interface. The S |
Это результат поиска, начинающийся с "9G20", "SAM9" |
Номер в каталоге | Производители | Описание | |
AT91SAM9G20 | ATMEL Corporation |
AT91 ARM Thumb Microcontrollers
Features
• Incorporates the ARM926EJ-S™ ARM® Thumb® Processor
– DSP Instruction Extensions, ARM Jazelle® Technology for Java® Acceleration – 32-KByte Data Cache, 32-KByte Instruction Cache, Write Buffer – CPU Frequency 400 MHz – Memory Managem |
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BLF9G20LS-160V | NXP Semiconductors |
Power LDMOS transistor BLF9G20LS-160V
Power LDMOS transistor
Rev. 2 — 21 May 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1. Typical perfo |
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BYW29G200 | STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY DIODES ®
BYW29G-200
HIGH EFFICIENCY FAST RECOVERY DIODES
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr VF FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT SMD
A NC
8A 200 V 35 ns 0.85 V
A K
K
D2 |
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MTB201209G202 | MAGNETIC |
Multilayer Ferrite Chip Beads LED Displays Numeric 7-segment
Single Digit Display 0.3”
PART NO CHIP material
LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD3222-XX LSD3224-XX LSD3225-XX LSD3223-XX GaP
λP (nm)
Vf(v) @ 20mA Min Max
2.8 2.8 2.8 2.4 2.4 2.8 2.8 2.8 2.8 2.4
Iv(mcd) @ 10 |
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R9G20412 | Powerex Power Semiconductors |
Fast Recovery Rectifier (1200Amperes Average 3600 Volts) |
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R9G20415 | Powerex Power Semiconductors |
Fast Recovery Rectifier (1500 Amperes Average 3600 Volts) |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |