S9014 даташит

S9014 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 45 50 5.0 100 0.4 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) Collect

Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9015. z Excellent HFE Linearity. z Power dissipation.(PC=0.2W) Pb Lead-free APPLICATIONS z Per-Amplifier low level & low noise. ORDERING INFORMATION Type No. Marking S9014 J6 Production specification S9014 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collect

www.DataSheet.co.kr S9014 TRANSISTOR (NPN) TO-92 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) High hFE and good linearity z z Complementary to S9015 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 50 45 5 0.1 0.45 150 -55-150 Units V V V A W ℃ ℃ 1 2 3

www.DataSheet.co.kr Elektronische Bauelemente NPN Silicon Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product S9014 A suffix of "-C" specifies halogen & lead-free FEATURES 3 SOT-23 Collector 3 1 Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 Power dissipation PCM : 0.2 W Collector Current ICM : 0.1 A Collector-base voltage 1 2 Base A L 3 2 Emitter V(BR)CBO : 50 V Operating & stor

NP N EP ITAXIAL S ILICON TRANSISTOR ( Version C1.0 ) Ge nera l Purpos e Applica tion S witching Application Collector Curre nt Ic=100mA Collector P owe r Dissipa tion P c=625mW Comple men tary to S9015 S9014 TO- 92 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Ba s e Volta ge Collector-Emitte r Volta ge VCBO VCEO Emitte r-Bas e Volta ge VEBO Collector Curre nt Collector P owe r Dis sipa tion IC PC J unction Te mpe ra ture Tj S tora ge Te mpe ra ture Ts tg Value 50 45 5 100 450 150 -55~ +150 (T

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S9014 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.4Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 50V • Operating and storage junction temperature range: -55OC to +150OC • Marking Code: S9014 Pin Configuration C BE Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Max Units V(BR)CBO Collector-Base Br

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W) Production specification S9014 Pb Lead-free APPLICATIONS z Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION Type No. S9014 Marking J6 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector

SS9014 SS9014 Pre-Amplifier, Low Level & Low Noise • High total power dissipation. (PT=450mW) • High hFE and good linearity • Complementary to SS9015 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 50 45 5 100 450 150 -55