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S8550 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
9 S8550   TRANSISTOR (PNP)

S8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current A ICM : - 0.5 Collector-base voltage V(BR)CBO : - 40 V 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS(Tamb=25℃ Symbol voltage voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) unless otherwise specified) Test conditions IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 85 50 MIN TYP MAX UNIT V V V Parameter Collector-base breakdown Ic= -100μA , Ic=- 0.1 mA, IE=-100μA, VCB= -40 VCE=-20 VE
Wing Shing Computer Components
Wing Shing Computer Components
pdf
8 S8550   PNP General Purpose Transistors

S8550 PNP General Purpose Transistors P b Lead(Pb)-Free TO-92 1. E MIT T E R 2. B A SE 3. COL L E CTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current Total Device Dis s ipation TA=2 5 C J unction Tem perature S torage, Tem perature Symbol V CE O V CB O VE B O IC PD Tj Ts tg Value -2 5 -4 0 -5 . 0 -5 0 0 0.625 150 -5 5 to +1 5 0 Unit Vdc Vdc Vdc m Adc W C C ELECTRICAL CHARACTERISTICS Characteristic
Weitron Technology
Weitron Technology
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7 S8550   LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR  DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications.  FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to UTC S8050 1 TO-92  ORDERING INFORMATION Order Number Lead Free Plating Halogen Free S8550L-x-T92-B S8550G-x-T92-B S8550L-x-
UTC
UTC
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6 S8550   PNP Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.5 Collector-base voltage A V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collect
Tuofeng Semiconductor
Tuofeng Semiconductor
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5 S8550   Si APD array

APD Si APD array S8550 4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity S8550 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk between each element. Features Applications l High sensitivity and low noise in short wavelength region l Low terminal capacitance l Optimized for blue light detection l Uniform gain and low cross-talk vari
Hamamatsu Corporation
Hamamatsu Corporation
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4 S8550   Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z High Collector Current.(IC= -500mA) Complementary To S8050. Excellent HFE Linearity. Production specification S8550 Pb Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION Type No. S8550 Marking 2TY Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C
BL
BL
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3 S8550LT1   HIGH VOLTAGE TRANSISTOR: (PNP)

S8550LT1 HIGH VOLTAGE TRANSISTOR: (PNP) FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW (Tamb=25℃) Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V PNP EPITAXIAL SILICON TRANSISTORS SOT—23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) Test conditions Ic= 100µA , IE=0 Ic= 1 mA,IB=0 IE= 100µA,IC=0 VCB= 30V , IE=
Wing Shing Computer Components
Wing Shing Computer Components
pdf
2 S8550LT1   NPN Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S8550LT1 TRANSISTOR (PNP) FEATURES SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.5 Collector-base voltage A V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 2. 4 1. 3 Unit: mm 0. 4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown
Tuofeng Semiconductor
Tuofeng Semiconductor
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Fairchild Semiconductor
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