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S3C49C9 даташитФункция этой детали – «High Performance And Low Power Consumption Smart Card». |
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Номер в каталоге | Производители | Описание | |
S3C49C9 | Samsung Semiconductor |
High Performance And Low Power Consumption Smart Card Microcontroller PRODUCT BRIEF (S3C49C9)
High Performance and Low Power Consumption Smart Card Microcontroller
The S3C49C9 single-chip CMOS micro-controller is specially designed and packaged for "Smart Card" application. The S3C49C9 is built around an outstanding CPU core: the 16/32 bit ARM7TM RISC processor. The S3C49C9 has 96K bytes of program memory (ROM), 32K bytes of program/data memory (EEPROM), 4K bytes of data memory (RAM), and advanced security features. The S3C49C9 is fully compatible with ISO 7816 standard for smart card app |
Это результат поиска, начинающийся с "3C49C9", "S3C4" |
Номер в каталоге | Производители | Описание | |
2N3499 | Semicoa Semiconductor |
Type 2N3499 Geometry 5620 Polarity NPN Data Sheet No. 2N3499
Type 2N3499
Geometry 5620 Polarity NPN Qual Level: JAN - JANTXV
Features: • General-purpose silicon transistor for switching and amplifier applications. Housed in TO-39 case. Also available in chip form using the 5620 chip geometry. The Min and Max limits |
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2N3499 | Semicoa Semiconductor |
Chip Type 2C3501 Geometry 5620 Polarity NPN Data Sheet No. 2N3499
Type 2N3499
Geometry 5620 Polarity NPN Qual Level: JAN - JANTXV
Features: • General-purpose silicon transistor for switching and amplifier applications. Housed in TO-39 case. Also available in chip form using the 5620 chip geometry. The Min and Max limits |
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2N3499 | CDIL |
NPN SILICON PLANAR RF TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR RF TRANSISTORS
2N3498, 2N3499, 2N3500, 2N3501
TO-39 Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION |
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2N3499 | Microsemi |
NPN SILICON SWITCHING TRANSISTOR 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
DEVICES
2N3498 2N3498L
2N3499 2N3499L
2N3500 2N |
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2N3499 | Motorola Semiconductors |
GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C Operating and Storage Junction
Temperature |
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2N3499 | New Jersey Semiconductor |
Trans GP BJT NPN 100V 0.5A 3-Pin TO-39 |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |