DataSheet26.com


S3C49C9 даташит

Функция этой детали – «High Performance And Low Power Consumption Smart Card».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
S3C49C9 Samsung Semiconductor
Samsung Semiconductor
  High Performance And Low Power Consumption Smart Card Microcontroller

PRODUCT BRIEF (S3C49C9) High Performance and Low Power Consumption Smart Card Microcontroller The S3C49C9 single-chip CMOS micro-controller is specially designed and packaged for "Smart Card" application. The S3C49C9 is built around an outstanding CPU core: the 16/32 bit ARM7TM RISC processor. The S3C49C9 has 96K bytes of program memory (ROM), 32K bytes of program/data memory (EEPROM), 4K bytes of data memory (RAM), and advanced security features. The S3C49C9 is fully compatible with ISO 7816 standard for smart card app
pdf

Это результат поиска, начинающийся с "3C49C9", "S3C4"

Номер в каталоге Производители Описание PDF
2N3499 Semicoa Semiconductor
Semicoa Semiconductor

Type 2N3499 Geometry 5620 Polarity NPN

Data Sheet No. 2N3499 Type 2N3499 Geometry 5620 Polarity NPN Qual Level: JAN - JANTXV Features: • General-purpose silicon transistor for switching and amplifier applications. Housed in TO-39 case. Also available in chip form using the 5620 chip geometry. The Min and Max limits
pdf
2N3499 Semicoa Semiconductor
Semicoa Semiconductor

Chip Type 2C3501 Geometry 5620 Polarity NPN

Data Sheet No. 2N3499 Type 2N3499 Geometry 5620 Polarity NPN Qual Level: JAN - JANTXV Features: • General-purpose silicon transistor for switching and amplifier applications. Housed in TO-39 case. Also available in chip form using the 5620 chip geometry. The Min and Max limits
pdf
2N3499 CDIL
CDIL

NPN SILICON PLANAR RF TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION
pdf
2N3499 Microsemi
Microsemi

NPN SILICON SWITCHING TRANSISTOR

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES 2N3498 2N3498L 2N3499 2N3499L 2N3500 2N
pdf
2N3499 Motorola Semiconductors
Motorola Semiconductors

GENERAL PURPOSE TRANSISTOR

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature
pdf
2N3499 New Jersey Semiconductor
New Jersey Semiconductor

Trans GP BJT NPN 100V 0.5A 3-Pin TO-39

pdf

[1]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты