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Datasheet S1P2655A04 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | S1P2655A04 | LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
INTRODUCTION
HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP
The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collec |  Samsung semiconductor | data |
S1P Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | S1P2655A01 | LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
INTRODUCTION
HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP
The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collec Samsung semiconductor data | | |
| 2 | S1P2655A02 | LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
INTRODUCTION
HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP
The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collec Samsung semiconductor data | | |
| 3 | S1P2655A03 | LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
INTRODUCTION
HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP
The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collec Samsung semiconductor data | | |
| 4 | S1P2655A04 | LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
INTRODUCTION
HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP
The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collec Samsung semiconductor data | | |
| 5 | S1P2655A05 | LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
INTRODUCTION
HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP
The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collec Samsung semiconductor data | | |
| 6 | S1PB | High Current Density Surface Mount Glass Passivated Rectifiers S1PB, S1PD, S1PG, S1PJ, S1PK, S1PM
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount Glass Passivated Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
Available
eSMP ® Series
• Ideal for automated placement • Glass passivated chip junction •  Vishay Siliconix rectifier | | |
| 7 | S1PD | High Current Density Surface Mount Glass Passivated Rectifiers S1PB, S1PD, S1PG, S1PJ, S1PK, S1PM
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount Glass Passivated Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
Available
eSMP ® Series
• Ideal for automated placement • Glass passivated chip junction • Vishay Siliconix rectifier | |
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