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S-LBAT54CWT1G даташитФункция этой детали – «Dual Series Schottky Barrier Diode». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
S-LBAT54CWT1G | Leshan Radio Company |
DUAL SERIES SCHOTTKY BARRIER DIODE LESHAN RADIO COMPANY, LTD.
DUAL SERIES SCHOTTKY BARRIER DIODE
These Schottky barrier diodes are designed for high speed applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface package is excellent for hand held and portable applications
space is limited.
LBAT54CWT1G S-LBAT54CWT1G
●FEATURES
1)Extremely Fast Switching Speed 2) Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc 3)We declare that the material of product compliant with RoHS
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Это результат поиска, начинающийся с "S-LB", "S-LBAT54CW" |
Номер в каталоге | Производители | Описание | |
S-LBAS16WT1G | Leshan Radio Company |
Switching Diode LESHAN RADIO COMPANY, LTD.
Silicon Switching Diode
FEATURE
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable |
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S-LBAS316T1G | Leshan Radio Company |
High speed diode LESHAN RADIO COMPANY, LTD.
High-speed diode
DESCRIPTION The LBAS316T1 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD323(SC76) SMD plastic package.
FEATURES · Ultra small plastic SMD package · High switching speed: max. 4 ns · Cont |
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S-LBAS516T1G | Leshan Radio Company |
High-speed Diode LESHAN RADIO COMPANY, LTD.
High-speed Diode
DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology
and encapsulated in the SOD523(SC79) SMD plastic package.
FEATURES · Ultra small plastic SMD package · High switching speed: max. 4 ns · Conti |
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S-LBAS70-04LT1G | Leshan Radio Company |
SCHOTTKY BARRIER DIODE LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
Features
Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP C |
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S-LBAS70-04LT3G | Leshan Radio Company |
SCHOTTKY BARRIER DIODE LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
Features
Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP C |
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S-LBAS70-05LT1G | Leshan Radio Company |
SCHOTTKY BARRIER DIODE LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
Features
Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP C |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |