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S-L2SC4083NT1G даташит

Функция этой детали – «High-frequency Amplifier Transistor».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
S-L2SC4083NT1G Leshan Radio Company
Leshan Radio Company
  High-Frequency Amplifier Transistor

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC4083NT1G Series S-L2SC4083NT1G Series Ordering Information Device L2SC4083NT1G S-L2SC4083NT1G L2SC4083NT3G S-L2SC4083NT3G L2SC4083PT1G S-L2SC4083PT1G L2SC4083PT3G S-L2SC4083PT3G L2SC4083QT1G S-L2SC4083QT1G L2SC4083QT3G S-L2SC4083QT3G
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Это результат поиска, начинающийся с "S-L2", "S-L2SC4083N"

Номер в каталоге Производители Описание PDF
S-L2980 Seiko Instruments
Seiko Instruments

High Ripple Rejection Low Dropout CMOS Voltage Regulator

datasheet.esom DataSheet 4 U .com datasheet.esom High Ripple Rejection Low Dropout CMOS Voltage Regulator S-L2980 Series datasheet.esom 2001 IC Marketing Group Seiko Instruments Inc. Seiko Instruments Inc. / Components Headquarters DataShee et4U.com D
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S-L2985 Seiko Instruments
Seiko Instruments

High Ripple Rejection WLP Package Low Dropout CMOS Voltage Regulator

Rev.2.0_00 HIGH RIPPLE-REJECTION WLP PACKAGE LOW DROPOUT CMOS VOLTAGE REGULATOR S-L2985 Series The S-L2985 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS
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S-L2N7002LT1G Leshan Radio Company
Leshan Radio Company

Small Signal MOSFET

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 • • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Rat
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S-L2SA1365ELT1G Leshan Radio Company
Leshan Radio Company

General Purpose Transistor

LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). F.EATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ●Excellent
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S-L2SA1365ELT3G Leshan Radio Company
Leshan Radio Company

General Purpose Transistor

LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). F.EATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ●Excellent
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S-L2SA1365FLT1G Leshan Radio Company
Leshan Radio Company

General Purpose Transistor

LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). F.EATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ●Excellent
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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