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S-L2SC2412KSMT1G даташитФункция этой детали – «General Purpose Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
S-L2SC2412KSMT1G | Leshan Radio Company |
General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
• We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
L2SC2412KQMT1G S-L2SC2412KQMT1G L2SC2412KQMT3G S-L2SC2412KQMT3G L2SC2412KRMT1G S-L2SC2412KRMT1G L2SC2412KRMT3G S-L2SC2412KRMT3G L2SC2412KSMT1G S-L2SC2412KSMT1G L2SC2412KSMT3G S-L2SC2412KSMT3G
MAXIMUM RATIN |
Это результат поиска, начинающийся с "S-L2", "S-L2SC2412KSM" |
Номер в каталоге | Производители | Описание | |
S-L2980 | Seiko Instruments |
High Ripple Rejection Low Dropout CMOS Voltage Regulator datasheet.esom
DataSheet 4 U .com datasheet.esom
High Ripple Rejection Low Dropout CMOS Voltage Regulator S-L2980 Series
datasheet.esom
2001 IC Marketing Group Seiko Instruments Inc.
Seiko Instruments Inc. / Components Headquarters
DataShee
et4U.com
D |
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S-L2985 | Seiko Instruments |
High Ripple Rejection WLP Package Low Dropout CMOS Voltage Regulator
Rev.2.0_00
HIGH RIPPLE-REJECTION WLP PACKAGE LOW DROPOUT CMOS VOLTAGE REGULATOR
S-L2985 Series
The S-L2985 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS |
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S-L2N7002LT1G | Leshan Radio Company |
Small Signal MOSFET LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET 115 mAmps, 60 Volts
N–Channel SOT–23
• • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
Rat |
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S-L2SA1365ELT1G | Leshan Radio Company |
General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent |
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S-L2SA1365ELT3G | Leshan Radio Company |
General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent |
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S-L2SA1365FLT1G | Leshan Radio Company |
General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |