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RT-121212 даташитФункция этой детали – «Econoline - Dc/dc - Converter». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
RT-121212 | Recom International Power |
ECONOLINE - DC/DC - CONVERTER |
Это результат поиска, начинающийся с "RT-1", "RT-121" |
Номер в каталоге | Производители | Описание | |
LC3564RT-10LV | Sanyo |
64K (8192 words x 8 bits) SRAM Ordering number: EN 4484B
CMOS LSI
LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM
Overview
The LC3564RM,RT are 8192-word × 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery- |
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LC3564RT-12LV | Sanyo |
64K (8192 words x 8 bits) SRAM Ordering number: EN 4484B
CMOS LSI
LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM
Overview
The LC3564RM,RT are 8192-word × 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery- |
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LC3564RT-15LV | Sanyo |
64K (8192 words x 8 bits) SRAM Ordering number: EN 4484B
CMOS LSI
LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM
Overview
The LC3564RM,RT are 8192-word × 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery- |
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M5M4V16169DRT-10 | Mitsubishi |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM MITSUBISHI LSIs
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Preliminary
This document is a preliminary Target Spec. and some of the contents are subject to change without notice.
PINCONFIGURATION (TOP VIEW) Vcc DQ |
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M5M4V16169DRT-15 | Mitsubishi |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM MITSUBISHI LSIs
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Preliminary
This document is a preliminary Target Spec. and some of the contents are subject to change without notice.
PINCONFIGURATION (TOP VIEW) Vcc DQ |
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M5M51016BRT-10L-I | Mitsubishi |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 99 Jul Jul ,1997 ,1997
MITSUBISHI MITSUBISHI LSIs LSIs
M5M51016BTP,RT-70L,-10L-I, M5M51016BTP,RT-70L,-10L-I, -70LL,-10LL-I -70LL,-10LL-I
1048576-BIT(65536-WORD 1048576-BIT(65536-WORDBY BY16-BIT)CMOS 16-BIT)CMOSSTATIC STATICRAM RAM
DESCRIPTION
The M5M51016BTP, RT are a 1048576-b |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |