Datasheet RJP63K2DPP-M0 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJP63K2DPP-M0	N-Channel IGBT Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak	Renesas

RJP63K2DPP Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJP63K2DPP-M0	N-Channel IGBT Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 2	Renesas

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