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Datasheet RJP6065DPM Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | RJP6065DPM | N-Channel IGBT Preliminary Datasheet
RJP6065DPM
Silicon N Channel IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding R07DS0204EJ0100 R |
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RJP6065 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
RJP6065DPM | N-Channel IGBT |
Renesas |
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Número de pieza | Descripción | Fabricantes | |
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