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RJP30H1DPD даташит

Функция этой детали – «N-channel Power Mosfet / Transistor».



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Номер в каталоге Производители Описание PDF
RJP30H1DPD Renesas
Renesas
  N-Channel Power MOSFET / Transistor

Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) 4 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E C G 12 3 Absolute Maximum Ratings
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Это результат поиска, начинающийся с "30H1DPD", "RJP30H1"

Номер в каталоге Производители Описание PDF
0402DF-301XJR Coilcraft
Coilcraft

Chip Inductors

Document 1069-1 Chip Inductors – 0402DF (1005) • Higher inductance values than other 0402 inductors • Ferrite construction for high current handling • 25 inductance values from 20 nH to 3.3 µH • Ideal for use in both mobile and infrastructure equipment • Equall
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05D301K TYEE
TYEE

Varistor

Varistor Specification TYEE Varistor Varistor are voltage dependent, nonlinear device which have an electrical behavior similar to back-to-back zener diodes. TYEE series zinc oxide varistor are nonlinear resistors, consisting main of zinc oxide and several kinds of metal oxide ad
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07D301K TYEE
TYEE

Varistor

Varistor Specification TYEE Varistor Varistor are voltage dependent, nonlinear device which have an electrical behavior similar to back-to-back zener diodes. TYEE series zinc oxide varistor are nonlinear resistors, consisting main of zinc oxide and several kinds of metal oxide ad
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0805CS-301E DELTA
DELTA

WIRE-WOUND CHIP INDUCTOR

1. Part Description 1.1 Part Numbering (Example) ( Ex. ) 0805 C S - 120 E J T S SIZE. 0402 1.0 * 0.5 mm 0603 1.6 * 0.8 mm 0805 2.0 * 1.2 mm 1008 2.5 * 2.0 mm 1206 3.2 * 1.6 mm 1210 3.2 * 2.5 mm SHAPE. C : C SHAPE H : H SHAPE M : MOLDING PROFILE. S: STANDARD T: LOW PROFILE Q:H
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08CH301K SFI
SFI

SMD Transient Voltage Suppressors

SMD Transient Voltage Suppressors Table of contents Table of Contents…………………………………………..……… 1-1 Introduction…………………………………………………..….. 2-2 Transient Voltage Suppressors………………………………
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100301 National Semiconductor
National Semiconductor

Low Power Triple 5-Input OR/NOR Gate

100301 Low Power Triple 5-Input OR/NOR Gate August 1998 100301 Low Power Triple 5-Input OR/NOR Gate General Description The 100301 is a monolithic triple 5-input OR/NOR gate. All inputs have 50 kΩ pull-down resistors and all outputs are buffered. n n n n 2000V ESD protection
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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