|
RJP30H1DPD даташитФункция этой детали – «N-channel Power Mosfet / Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
RJP30H1DPD | Renesas |
N-Channel Power MOSFET / Transistor Preliminary Datasheet
RJP30H1DPD
Silicon N Channel IGBT High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011
Outline
RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252)
4
1. Gate 2. Collector 3. Emitter 4. Collector (Flange)
E
C
G
12
3
Absolute Maximum Ratings |
Это результат поиска, начинающийся с "30H1DPD", "RJP30H1" |
Номер в каталоге | Производители | Описание | |
0402DF-301XJR | Coilcraft |
Chip Inductors Document 1069-1
Chip Inductors – 0402DF (1005)
• Higher inductance values than other 0402 inductors • Ferrite construction for high current handling • 25 inductance values from 20 nH to 3.3 µH • Ideal for use in both mobile and infrastructure equipment
• Equall |
|
05D301K | TYEE |
Varistor Varistor Specification
TYEE Varistor Varistor are voltage dependent, nonlinear device which have an electrical behavior similar to back-to-back zener diodes. TYEE series zinc oxide varistor are nonlinear resistors, consisting main of zinc oxide and several kinds of metal oxide ad |
|
07D301K | TYEE |
Varistor Varistor Specification
TYEE Varistor Varistor are voltage dependent, nonlinear device which have an electrical behavior similar to back-to-back zener diodes. TYEE series zinc oxide varistor are nonlinear resistors, consisting main of zinc oxide and several kinds of metal oxide ad |
|
0805CS-301E | DELTA |
WIRE-WOUND CHIP INDUCTOR 1. Part Description
1.1 Part Numbering (Example)
( Ex. )
0805 C S - 120 E J T S
SIZE.
0402 1.0 * 0.5 mm 0603 1.6 * 0.8 mm 0805 2.0 * 1.2 mm 1008 2.5 * 2.0 mm 1206 3.2 * 1.6 mm 1210 3.2 * 2.5 mm
SHAPE.
C : C SHAPE H : H SHAPE M : MOLDING
PROFILE.
S: STANDARD T: LOW PROFILE Q:H |
|
08CH301K | SFI |
SMD Transient Voltage Suppressors SMD Transient Voltage Suppressors
Table of contents
Table of Contents…………………………………………..……… 1-1 Introduction…………………………………………………..….. 2-2
Transient Voltage Suppressors……………………………… |
|
100301 | National Semiconductor |
Low Power Triple 5-Input OR/NOR Gate 100301 Low Power Triple 5-Input OR/NOR Gate
August 1998
100301 Low Power Triple 5-Input OR/NOR Gate
General Description
The 100301 is a monolithic triple 5-input OR/NOR gate. All inputs have 50 kΩ pull-down resistors and all outputs are buffered. n n n n 2000V ESD protection |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |