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Datasheet RJH30H1DPP-M0-T2 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | RJH30H1DPP-M0 | High Speed Power Switching Preliminary Datasheet
RJH30H1DPP-M0
Silicon N Channel IGBT High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low l |
Renesas |
RJH30H1DPP Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
RJH30H1DPP-M0 | High Speed Power Switching |
Renesas |
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Número de pieza | Descripción | Fabricantes | |
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