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Datasheet Q62702-A121 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | Q62702-A121 | SILICON PIN DIODES | Siemens Semiconductor Group | diode |
2 | Q62702-A121 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) | Siemens Semiconductor Group | diode |
3 | Q62702-A1211 | Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance) BAR 63-02W
Silicon PIN Diode • PIN diode for high speed switching of RF signals • Low forward resistance, small capacitance small inductance • Very low capacitance • For frequencies up to 3 GHz
2
1
VES05991
Type BAR 63-02W
Marking Ordering Code G Q62702-A1211
Pin Configuration 1=C 2=A
| Siemens Semiconductor Group | diode |
4 | Q62702-A1214 | Silicon Rf Switching Diode Preliminary data BA 892
Silicon Rf Switching Diode Preliminary data • For VHF band switching in TV / VTR tuners • Low forward resistance, small capacitance, small inductance
2
1
VES05991
Type BA 892
Marking A
Ordering Code Q62702-A1214
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter D | Siemens Semiconductor Group | diode |
5 | Q62702-A1215 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) | Siemens Semiconductor Group | diode |
Q62 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | Q62607-S60 | Silizium-Fotoelement Silicon Photovoltaic Cell TP 60 P
Silizium-Fotoelement Silicon Photovoltaic Cell
TP 60 P
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1120 nm q Kathode = Chipunterseite q Montage durch Schraube/Mu Siemens Semiconductor Group data | | |
2 | Q62607-S61 | Silizium-Fotoelement Silicon Photovoltaic Cell TP 61 P
Silizium-Fotoelement Silicon Photovoltaic Cell
TP 61 P
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1120 nm q Kathode = Chipunterseite q Mit feuchtigkeitsabweisen Siemens Semiconductor Group data | | |
3 | Q627002G0078 | GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones) CGY 81
GaAs MMIC
l l l l l
Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones 31 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match
ESD: Electros Siemens Semiconductor Group amplifier | | |
4 | Q62701-F51 | PNP GERMANIUM RF TRANSISTOR Siemens Semiconductor Group transistor | | |
5 | Q62701-F72 | PNP GERMANIUM RF TRANSISTOR Siemens Semiconductor Group transistor | | |
6 | Q62701-F88 | PNP GERMANIUM RHF TRANSISTOR Siemens Semiconductor Group transistor | | |
7 | Q62701-F92 | PNP GERMANIUM UHF TRANSISTOR Siemens Semiconductor Group transistor | |
Esta página es del resultado de búsqueda del Q62702-A121. Si pulsa el resultado de búsqueda de Q62702-A121 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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