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Datasheet PTF210901 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | PTF210901 | LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz PTF210901
LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz
Description
The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Two–Carrier WCDMA Drive–Up |
 Infineon Technologies AG |
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| 1 | PTF210901E | LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz PTF210901
LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz
Description
The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Two–Carrier WCDMA Drive–Up |
Infineon Technologies AG |
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