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даташит PTF210451E IC Даташиты PDF

Номер в каталоге Описание Производители PDF
1 PTF210451E   LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz

PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • Internal matching for wideband performance Typical two–carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 = –37 dBc Typical CW performance - Output power at P–1dB = 50 W - Linear gain =
Infineon Technologies AG
Infineon Technologies AG
pdf



PTF210 даташита ( переписка )

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PTF210901

LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz

PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two–Carr
Infineon Technologies AG
Infineon Technologies AG
pdf
PTF210301E

LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz

PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features
Infineon Technologies AG
Infineon Technologies AG
pdf
PTF210901E

LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz

PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two–Carr
Infineon Technologies AG
Infineon Technologies AG
pdf
PTF210451

LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz

PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features
Infineon Technologies AG
Infineon Technologies AG
pdf
PTF210301

LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz

PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features
Infineon Technologies AG
Infineon Technologies AG
pdf
PTF210301A

LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz

PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features
Infineon Technologies AG
Infineon Technologies AG
pdf



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