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Datasheet PTF210451E Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 PTF210451E   LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz

PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • Internal matc
Infineon Technologies AG
Infineon Technologies AG
datasheet PTF210451E pdf

PTF2104 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
PTF210451E

LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz

PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features
Infineon Technologies AG
Infineon Technologies AG
datasheet pdf - Infineon Technologies AG
PTF210451

LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz

PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features
Infineon Technologies AG
Infineon Technologies AG
datasheet pdf - Infineon Technologies AG


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