Datasheet PTF210301A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTF210301A	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband in	Infineon Technologies AG

PTF2103 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTF210301A	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features	Infineon Technologies AG
PTF210301	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features	Infineon Technologies AG
PTF210301E	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
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