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Datasheet PTF210301 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | PTF210301 | LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz PTF210301
LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz
Description
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • Broadband in |
 Infineon Technologies AG |
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| 2 | PTF210301A | LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz PTF210301
LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz
Description
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • Broadband in |
Infineon Technologies AG |
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| 1 | PTF210301E | LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz PTF210301
LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz
Description
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • Broadband in |
Infineon Technologies AG |
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