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Datasheet PHD96NQ03LT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PHD96NQ03LT | N-channel enhancement mode field-effect transistor PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
Rev. 03 — 23 October 2001 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP96NQ03LT in SOT78 (TO-220AB) PHB96NQ03LT |  NXP Semiconductors | transistor |
PHD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PHD101NQ03LT | N-channel TrenchMOS logic level FET DPAK
PHD101NQ03LT
N-channel TrenchMOS logic level FET
Rev. 5 — 31 October 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualif NXP Semiconductors data | | |
| 2 | PHD108NQ03LT | N-channel TrenchMOS logic level FET PHD108NQ03LT
N-channel TrenchMOS logic level FET
Rev. 04 — 5 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for u NXP Semiconductors data | | |
| 3 | PHD10N10E | PowerMOS transistor Philips Semiconductors
Product Specification
PowerMOS transistor
PHD10N10E
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, weld NXP Semiconductors transistor | | |
| 4 | PHD110NQ03LT | N-channel TrenchMOS logic level FET
PHD110NQ03LT
N-channel TrenchMOS™ logic level FET
Rev. 01 — 16 June 2004
M3D300
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Logic level threshold s NXP Semiconductors data | | |
| 5 | PHD11N03LT | N-channel TrenchMOS transistor Logic level FET Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor Logic level FET
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible
g
PHB11N03LT, PHD11N03LT
SYMBOL
d
QUICK REFERENCE DATA VDSS = 30 V ID = 10.5 A RDS(ON) � NXP Semiconductors transistor | | |
| 6 | PHD11N06LT | TrenchMOS transistor Logic level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
FEATURES
• ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
PHB11N06LT, PHD11N06LT NXP Semiconductors transistor | | |
| 7 | PHD11N06LT | N-channel TrenchMOS transistor Logic level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
FEATURES
• ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
PHB11N06LT, PHD11N06LT NXP Semiconductors transistor | |
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