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PDTA143E даташит

Функция этой детали – «PNP Resistor-equipped Transistors».



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Номер в каталоге Производители Описание PDF
PDTA143E NXP Semiconductors
NXP Semiconductors
  PNP resistor-equipped transistors

DISCRETE SEMICONDUCTORS DATA SHEET PDTA143E series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 2003 Sep 08 2004 Aug 04 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter
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PDTA143EE NXP Semiconductors
NXP Semiconductors
  PNP resistor-equipped transistor

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143EE PNP resistor-equipped transistor Product specification Supersedes data of 1997 Jul 02 File under Discrete Semiconductors, SC04 1998 Jul 23 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits �
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PDTA143EK NXP Semiconductors
NXP Semiconductors
  PNP resistor-equipped transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTA143EK PNP resistor-equipped transistor Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC04 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driv
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PDTA143ES NXP Semiconductors
NXP Semiconductors
  PNP resistor-equipped transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA143ES PNP resistor-equipped transistor Product specification Supersedes data of 1997 Jul 02 File under Discrete Semiconductors, SC04 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driv
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PDTA143ET NXP Semiconductors
NXP Semiconductors
  PNP resistor-equipped transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA143ET PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 18 1999 Apr 13 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits. • Inverter circuit configu
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PDTA143EU NXP Semiconductors
NXP Semiconductors
  PNP resistor-equipped transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA143EU PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 18 1999 Apr 13 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configur
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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