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PDTA143E даташитФункция этой детали – «PNP Resistor-equipped Transistors». |
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Номер в каталоге | Производители | Описание | |
PDTA143E | NXP Semiconductors |
PNP resistor-equipped transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTA143E series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ
Product specification Supersedes data of 2003 Sep 08 2004 Aug 04
Philips Semiconductors
Product specification
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ
FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter |
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PDTA143EE | NXP Semiconductors |
PNP resistor-equipped transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
PDTA143EE PNP resistor-equipped transistor
Product specification Supersedes data of 1997 Jul 02 File under Discrete Semiconductors, SC04 1998 Jul 23
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits � |
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PDTA143EK | NXP Semiconductors |
PNP resistor-equipped transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
PDTA143EK PNP resistor-equipped transistor
Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC04 1998 May 18
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driv |
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PDTA143ES | NXP Semiconductors |
PNP resistor-equipped transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PDTA143ES PNP resistor-equipped transistor
Product specification Supersedes data of 1997 Jul 02 File under Discrete Semiconductors, SC04 1998 May 18
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driv |
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PDTA143ET | NXP Semiconductors |
PNP resistor-equipped transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PDTA143ET PNP resistor-equipped transistor
Product specification Supersedes data of 1998 May 18 1999 Apr 13
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits. • Inverter circuit configu |
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PDTA143EU | NXP Semiconductors |
PNP resistor-equipped transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
PDTA143EU PNP resistor-equipped transistor
Product specification Supersedes data of 1998 May 18 1999 Apr 13
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
FEATURES • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configur |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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