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даташит P7NB60FP IC Даташиты PDF |
| Номер в каталоге | Описание | Производители | ||
| 1 | P7NB60FP | STP7NB60FP
STP7NB60 STP7NB60FP
N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
TYPE STP7NB60 STP7NB60F P
s s s s s
V DSS 600 V 600 V
R DS(on) < 1.2 Ω < 1.2 Ω
ID 7.2 A 4.1 A
TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
1 2 3
1 2 3
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending stri |
 ST Microelectronics |
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P7NB даташита ( переписка ) |
| Номер в каталоге | Описание | Производители | |
| P7NB80FP | STP7NB80
®
STP7NB80 STP7NB80FP
N - CHANNEL 800V - 1.2Ω - 6.5A - TO-220/TO-220FP PowerMESH™ MOSFET
TYPE ST P7NB80 ST P7NB80FP
s s s s s
V DSS 800 V 800 V
R DS(on) < 1.5 Ω < 1.5 Ω
ID 6.5 A 6.5 A
TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 10 |
ST Microelectronics |
 |
| P7NB60 | STP7NB60FP
STP7NB60 STP7NB60FP
N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
TYPE STP7NB60 STP7NB60F P
s s s s s
V DSS 600 V 600 V
R DS(on) < 1.2 Ω < 1.2 Ω
ID 7.2 A 4.1 A
TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW |
ST Microelectronics |
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На первой странице data sheets приводятся: |
| DataSheet26.com | 2020 | Контакты |