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даташит P5NC70Z IC Даташиты PDF

Номер в каталоге Описание Производители PDF
1 P5NC70Z    STP5NC70Z

STP5NC70Z - STP5NC70ZFP STB5NC70Z - STB5NC70Z-1 N-CHANNEL 700V - 1.8Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP5NC70Z/FP STB5NC70Z/-1 s s VDSS 700V 700V RDS(on) <2Ω <2Ω ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED D²PAK 1 2 3 TO-220 TO-220FP 12 3 DESCRIPTION The third generation of MESH OVERLAY™ Pow
STMicroelectronics
STMicroelectronics
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P5N даташита ( переписка )

Номер в каталоге Описание Производители PDF
P5N50C

5 Ampere 500 Volt N-Channel MOSFET

P5N50C ® Pb Free Plating Product P5N50C 5 Ampere 500 Volt N-Channel MOSFET { ̻ Pb Features ̰ ̰ ̰ ̰ ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested ඔ 2. Drain BVDSS = 500V ̵ 1. Gate {
Thinki Semiconductor
Thinki Semiconductor
pdf
P5N50

IXTP5N50P

Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTA 5N50P IXTP 5N50P IXTY 5N50P VDSS = 500 V = 4.8 A ID25 RDS(on) ≤ 1.4 Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25
IXYS Corporation
IXYS Corporation
pdf
P5NC90

STP5NC90

STP5NC90Z - STP5NC90ZFP STB5NC90Z - STB5NC90Z-1 N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP5NC90Z/FP STB5NC90Z/-1 s s VDSS 900V 900V RDS(on) < 2.5Ω < 2.5Ω ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(
ST Microelectronics
ST Microelectronics
pdf
P5NK90Z

STP5NK90Z

STP5NK90Z STF5NK90Z N-CHANNEL 900V - 2Ω - 4.5A TO-220/TO-220FP Zener-Protected SuperMESH™MOSFET Table 1: General Features TYPE STP5NK90Z STF5NK90Z s Figure 1: Package ID 4.5 A 4.5 A (*) Pw 125 W 30 W VDSS 900 V 900 V RDS(on) < 2.5 Ω < 2.5 Ω TYPICAL RDS(on) = 2 Ω s E
STMicroelectronics
STMicroelectronics
pdf
P5N80

FQP5N80

FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored t
Fairchild Semiconductor
Fairchild Semiconductor
pdf
P5NK65ZFP

STP5NK65ZFP

STP5NK65ZFP N-channel 650 V, 1.5 Ω, 4.5 A TO-220FP Zener-protected SuperMESH™ Power MOSFET Features Type STP5NK65ZFP ■ ■ ■ ■ ■ ■ VDSS 650 V RDS(on) max < 1.8 Ω ID 4.5 A Pw 25 W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very
STMicroelectronics
STMicroelectronics
pdf
P5NK100Z

STP5NK100Z

STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3™ Power MOSFET Features Type STF5NK100Z STP5NK100Z STW5NK100Z ■ ■ ■ ■ ■ VDSS (@TJMAX) 1000 V 1000 V 1000 V RDS(on)max < 3.7 Ω < 3.7 Ω < 3.7 Ω ID 3 3.5 A 3.5 A
STMicroelectronics
STMicroelectronics
pdf
P5NA80

STP5NA80

( DataSheet : ) STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA80 STP5NA80FI VDSS 800 V 800 V RDS(on) < 2.4 Ω < 2.4 Ω ID 4.7 A 2.8 A s TYPICAL RDS(on) = 1.8 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVAL
STMicroelectronics
STMicroelectronics
pdf
P5NA60FI

STP5NA60FI

STP5NA60 STP5NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA60 STP5NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 1.6 Ω < 1.6 Ω ID 5.3 A 3.4 A TYPICAL RDS(on) = 1.35 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AV
STMicroelectronics
STMicroelectronics
pdf
P5NB80

STP5NB80

® STP5NB80 STP5NB80FP N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE ST P5NB80 ST P5NB80FP s s s s s V DSS 800 V 800 V R DS(on) < 2.2 Ω < 2.2 Ω ID 5 A 5 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVA
ST Microelectronics
ST Microelectronics
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Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.

HYDIS
HYDIS
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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