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P55NF06 даташит ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
3 P55NF06   N-CHANNEL POWER MOSFET TRANSISTOR

55NF06 ® Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. 12 3 TO-220/TO-220F „ FEATURES 12 3 TO-252/DPAK * RDS(
Thinki Semiconductor
Thinki Semiconductor
P55NF06 pdf Даташит
2 P55NF06   STP55NF06

STB55NF06, STP55NF06, STP55NF06FP N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet — production data Features Order code STB55NF06 STP55NF06 STP55NF06FP VDSS RDS(on) max. ID 60 V < 0.018 Ω 50 A 50 A (1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value ■ 100% avalanche tested ■ Exceptional dv/dt capability Applications ■ Switching application Description These Power MOSFETs have been developed using STMicroelec
ST Microelectronics
ST Microelectronics
P55NF06 pdf Даташит
1 P55NF06L   STP55NF06L

STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D2PAK/I2PAK STripFET™ II Power MOSFET General features Type STP55NF06L STB55NF06L STB55NF06L-1 VDSS 60V 60V 60V RDS(on) <0.018Ω <0.018Ω <0.018Ω ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization ID 55A 55A 55A Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high
STMicroelectronics
STMicroelectronics
P55NF06L pdf Даташит


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