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P45N02LD даташит ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
3 P45N02LD   N-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P45N02LD TO-252 (DPAK) D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20mΩ ID 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS ±20 45 28 140 20 140 5.6 55 33 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C
Niko-Sem
Niko-Sem
P45N02LD pdf Даташит
2 P45N02LDG   N-Channel Enhancement Mode MOSFET

P45N02LDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ @VGS = 10V ID 32A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 32 20 110 Avalanche Current IAS 23 Avalanche Energy L = 0.1mH EAS 27 Power Dissipation TC = 25 °C TC = 100 °C PD 35 14 Operating Junction & St
UNIKC
UNIKC
P45N02LDG pdf Даташит
1 P45N02LDG   N-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P45N02LDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20m£[ ID 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS ±20 45 28 140 20 140 5.6 55 33 -55 to 150 275 UNITS V TC = 25 °C TC
Niko-Sem
Niko-Sem
P45N02LDG pdf Даташит


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