DataSheet26.com


даташит P3NK80Z IC Даташиты PDF

Номер в каталоге Описание Производители PDF
1 P3NK80Z   STP3NK80Z

STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1 800 V 800 V 800 V 800 V < 4.5 Ω < 4.5 Ω < 4.5 Ω < 4.5 Ω 2.5 A 2.5 A 2.5 A 2.5 A 70 W 25 W 70 W 70 W s TYPICAL RDS(on) = 3.8 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILI
STMicroelectronics
STMicroelectronics
pdf



P3N даташита ( переписка )

Номер в каталоге Описание Производители PDF
P3NA90FI

STP3NA90FI

STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P3NA 90 ST P3NA 90FI VDSS 900 V 900 V RDS(o n) < 5.3 Ω < 5.3 Ω ID 3A 1.9 A s TYPICAL RDS(on) = 4.4 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REP
STMicroelectronics
STMicroelectronics
pdf
P3NA50

STP3NA50

STP3NA50 STP3NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA50 STP3NA50FI VDSS 500 V 500 V RDS(on) <3Ω <3Ω ID 3.3 A 2.3 A s TYPICAL RDS(on) = 2.4 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 1
STMicroelectronics
STMicroelectronics
pdf
P3NA60

STP3NA60

STP3NA60 STP3NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3NA60FI VDSS 600 V 600 V RDS(on) <4Ω <4Ω ID 2.9 A 2.1 A s TYPICAL RDS(on) = 3.3 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 1
STMicroelectronics
STMicroelectronics
pdf
P3NK90Z

STP3NK90Z

STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP3NK90Z STP3NK90ZFP STD3NK90Z STD3NK90Z-1 VDSS 900 900 900 900 V V V V RDS(on) < 4.8 < 4.8 < 4.8 < 4.8 Ω Ω Ω Ω ID 3A 3A 3
STMicroelectronics
STMicroelectronics
pdf
P3NB60FP

STP3NB60

m o .c U 4 STP3NB60 t e STP3NB60FP e h S N - CHANNEL ENHANCEMENT MODE a t PowerMESH™ MOSFET a .D w w w TYPE V DSS R DS(on) ID STP3NB60 STP3NB60FP 600 V 600 V <3.6 Ω < 3.6 Ω 3.3 A 2.2 A s s s s s TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTE
ST Microelectronics
ST Microelectronics
pdf
P3NB60FP

STP3NB60FP

m o .c U 4 STP3NB60 t e STP3NB60FP e h S N - CHANNEL ENHANCEMENT MODE a t PowerMESH™ MOSFET a .D w w w TYPE V DSS R DS(on) ID STP3NB60 STP3NB60FP 600 V 600 V <3.6 Ω < 3.6 Ω 3.3 A 2.2 A s s s s s TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTE
ST Microelectronics
ST Microelectronics
pdf
P3NK90Z

STP3NK90Z

STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP3NK90Z STP3NK90ZFP STD3NK90Z STD3NK90Z-1 VDSS 900 900 900 900 V V V V RDS(on) < 4.8 < 4.8 < 4.8 < 4.8 Ω Ω Ω Ω ID 3A 3A 3
STMicroelectronics
STMicroelectronics
pdf
P3NB80

STP3NB80

m o .c U 4 STP3NB80 t e STP3NB80FP e h S N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP a t PowerMESH™ MOSFET a .D w w w ® TYPE V DSS R DS(on) ID STP3NB80 STP3NB80FP 800 V 800 V < 6.5 Ω < 6.5 Ω 2.6 A 2.6 A s s s s s TYPICAL RDS(on) = 4.6
ST Microelectronics
ST Microelectronics
pdf
P3N90FI

STP3N90FI

ST Microelectronics
ST Microelectronics
pdf
P3NB80FP

STP3NB80FP

m o .c U 4 STP3NB80 t e STP3NB80FP e h S N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP a t PowerMESH™ MOSFET a .D w w w ® TYPE V DSS R DS(on) ID STP3NB80 STP3NB80FP 800 V 800 V < 6.5 Ω < 6.5 Ω 2.6 A 2.6 A s s s s s TYPICAL RDS(on) = 4.6
ST Microelectronics
ST Microelectronics
pdf



Ссылка Поделиться :
[1] 

Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.

HYDIS
HYDIS
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



Index : A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q



DataSheet26.com    |   2020    |   Контакты