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P2N2907 даташит

Функция этой детали – «PNP SilICon Planar Epitaxial Transistors».



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Номер в каталоге Производители Описание PDF
P2N2907 Motorola Semiconductors
Motorola Semiconductors
  AMPLIFIER TRANSISTORS

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation T/ = 25°C Derate above 25°C Total Device Dissipation Tq = 25°C Derate above 25 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD pd Tj, T stg Symbol R»jc RftJA P2N P2N 2907 2907A 40 60 60 5.0 600 625 5.0 1.5 12 -55 to +150
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P2N2907 CDIL
CDIL
  PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package CB E Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCEO VCBO VEBO 40 60 5 Collector Current Total Power Dissipation @ Ta=25ºC Der
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P2N2907A ON Semiconductor
ON Semiconductor
  Amplifier Transistor

P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value --60 --60 --5.0 --600 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg --55 to +150
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P2N2907A Motorola  Inc
Motorola Inc
  Amplifier Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2907A/D Amplifier Transistor PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER P2N2907A MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –60 –60 –5.0 –600 625
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P2N2907A CDIL
CDIL
  PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package CB E Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCEO VCBO VEBO 40 60 5 Collector Current Total Power Dissipation @ Ta=25ºC Der
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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