|
P2N2907 даташитФункция этой детали – «PNP SilICon Planar Epitaxial Transistors». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
P2N2907 | Motorola Semiconductors |
AMPLIFIER TRANSISTORS MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation T/ = 25°C
Derate above 25°C Total Device Dissipation Tq = 25°C
Derate above 25 °C Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Symbol
VCEO VCBO VEBO
ic
PD
pd
Tj, T stg
Symbol R»jc
RftJA
P2N P2N 2907 2907A
40 60 60
5.0
600 625
5.0 1.5 12
-55 to +150
|
|
P2N2907 | CDIL |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
P2N2907 P2N2907A
TO-92 Plastic Package
CB E
Designed for switching and linear applications, DC amplifier and driver for industrial applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
P2N2907
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage
VCEO VCBO VEBO
40 60
5
Collector Current Total Power Dissipation @ Ta=25ºC Der |
|
P2N2907A | ON Semiconductor |
Amplifier Transistor P2N2907A
Amplifier Transistor
PNP Silicon
Features
• These are Pb--Free Devices*
MAXIMUM RATINGS
Rating Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol VCEO VCBO VEBO IC PD
Value --60 --60 --5.0 --600 625 5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
W
Derate above 25°C
12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
--55 to +150
|
|
P2N2907A | Motorola Inc |
Amplifier Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by P2N2907A/D
Amplifier Transistor
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER
P2N2907A
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –60 –60 –5.0 –600 625 |
|
P2N2907A | CDIL |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
P2N2907 P2N2907A
TO-92 Plastic Package
CB E
Designed for switching and linear applications, DC amplifier and driver for industrial applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
P2N2907
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage
VCEO VCBO VEBO
40 60
5
Collector Current Total Power Dissipation @ Ta=25ºC Der |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |